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Tower Semiconductor to Present at IMS 2025 Highlighting Recent Innovations in RF Foundry Technology

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Tower Semiconductor (TSEM) announced its participation in the International Microwave Symposium 2025 in San Francisco, where it will present a groundbreaking joint white paper with pSemi. The paper, nominated for Best Industry Paper Award, showcases an innovative SPDT switch using Tower's PCM RF switches in RFSOI CMOS process. The technology achieves ultra-wideband performance from DC to 110 GHz with less than 2dB insertion loss, features 30 dBm power handling, and demonstrates 15-20 dB better linearity than current RFSOI CMOS SPDTs. The presentation, scheduled for June 19, 2025, will highlight how this technology enables advanced circuits for 5G, future 6G, SatCom, beamforming, and millimeter-wave applications.
Tower Semiconductor (TSEM) ha annunciato la sua partecipazione al International Microwave Symposium 2025 a San Francisco, dove presenterà un innovativo white paper congiunto con pSemi. Il documento, nominato per il premio Best Industry Paper Award, illustra un interruttore SPDT all'avanguardia che utilizza gli switch RF PCM di Tower nel processo RFSOI CMOS. Questa tecnologia offre prestazioni ultra-wideband da DC a 110 GHz con una perdita di inserzione inferiore a 2 dB, supporta una potenza di 30 dBm e dimostra una linearità superiore di 15-20 dB rispetto agli attuali SPDT RFSOI CMOS. La presentazione, prevista per il 19 giugno 2025, metterà in evidenza come questa tecnologia abiliti circuiti avanzati per 5G, futuro 6G, SatCom, beamforming e applicazioni a onde millimetriche.
Tower Semiconductor (TSEM) anunció su participación en el International Microwave Symposium 2025 en San Francisco, donde presentará un innovador documento técnico conjunto con pSemi. El artículo, nominado al premio Best Industry Paper Award, muestra un interruptor SPDT innovador que utiliza los switches RF PCM de Tower en el proceso RFSOI CMOS. La tecnología logra un rendimiento ultra-wideband desde DC hasta 110 GHz con una pérdida de inserción menor a 2 dB, maneja una potencia de 30 dBm y demuestra una linealidad 15-20 dB mejor que los SPDT RFSOI CMOS actuales. La presentación, programada para el 19 de junio de 2025, destacará cómo esta tecnología permite circuitos avanzados para 5G, futuro 6G, SatCom, formación de haces y aplicaciones de ondas milimétricas.
타워 세미컨덕터(Tower Semiconductor, TSEM)는 2025년 샌프란시스코에서 열리는 국제 마이크로웨이브 심포지엄(International Microwave Symposium 2025)에 참가하여 pSemi와 공동으로 작성한 혁신적인 백서를 발표할 예정입니다. 이 백서는 Best Industry Paper Award 후보로 선정되었으며, 타워의 PCM RF 스위치를 RFSOI CMOS 공정에 적용한 혁신적인 SPDT 스위치를 소개합니다. 이 기술은 DC부터 110GHz까지 초광대역 성능을 제공하며, 삽입 손실은 2dB 미만, 30dBm의 전력 처리 능력을 갖추고 있으며, 기존 RFSOI CMOS SPDT 대비 15-20dB 향상된 선형성을 보여줍니다. 2025년 6월 19일에 예정된 발표에서는 이 기술이 5G, 미래 6G, 위성통신(SatCom), 빔포밍, 밀리미터파 응용 분야를 위한 첨단 회로 구현에 어떻게 기여하는지 강조할 것입니다.
Tower Semiconductor (TSEM) a annoncé sa participation au International Microwave Symposium 2025 à San Francisco, où il présentera un article conjoint révolutionnaire avec pSemi. Ce document, nommé pour le Best Industry Paper Award, met en avant un commutateur SPDT innovant utilisant les commutateurs RF PCM de Tower dans le procédé RFSOI CMOS. La technologie offre une performance ultra-large bande de DC à 110 GHz avec une perte d'insertion inférieure à 2 dB, supporte une puissance de 30 dBm et démontre une linéarité supérieure de 15 à 20 dB par rapport aux SPDT RFSOI CMOS actuels. La présentation, prévue pour le 19 juin 2025, soulignera comment cette technologie permet la réalisation de circuits avancés pour la 5G, la future 6G, SatCom, le beamforming et les applications en ondes millimétriques.
Tower Semiconductor (TSEM) hat seine Teilnahme am International Microwave Symposium 2025 in San Francisco angekündigt, wo es ein bahnbrechendes gemeinsames Whitepaper mit pSemi vorstellen wird. Das Papier, das für den Best Industry Paper Award nominiert ist, präsentiert einen innovativen SPDT-Schalter, der Towers PCM-RF-Schalter im RFSOI-CMOS-Prozess nutzt. Die Technologie erreicht eine Ultra-Breitband-Leistung von DC bis 110 GHz mit weniger als 2 dB Einfügedämpfung, verfügt über eine Leistungshandhabung von 30 dBm und zeigt eine um 15-20 dB bessere Linearität als aktuelle RFSOI-CMOS-SPDTs. Die Präsentation, geplant für den 19. Juni 2025, wird hervorheben, wie diese Technologie fortschrittliche Schaltungen für 5G, zukünftiges 6G, SatCom, Beamforming und Millimeterwellen-Anwendungen ermöglicht.
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Presenting a joint white paper with pSemi nominated for Best Industry Paper Award highlighting next-generation RF switch technology

MIGDAL HAEMEK, Israel, June 3, 2025 – Tower Semiconductor (NASDAQ/TASE: TSEM), a leading foundry of high-value analog semiconductor solutions, today announced its participation in the upcoming International Microwave Symposium (IMS) 2025, taking place June 16–21 in San Francisco, California, highlighting its advanced RF & HPA technology platform and latest advancements in RF switch technology. As part of the event’s technical program, Tower will present a jointly developed white paper with pSemi, titled “A Low-Loss, Wideband, 0–110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers” nominated for the Best Industry Paper Award at IMS2025.

This paper highlights a record-breaking wideband single-pole, double-throw (SPDT) switch utilizing Tower Semiconductor’s monolithically integrated PCM RF switches in an RFSOI CMOS process. The key features include ultra-wideband performance (true DC to 110 GHz with less than 2 dB of insertion loss), digital control using integrated CMOS drivers with MIPI RFFE interface (available in the PDK), 30 dBm measured power handling, and 15-20 dB better linearity performance than RFSOI CMOS SPDTs currently available. This combination of ultra low-loss wideband performance, power handling, and full CMOS/digital integration simplifies implementation for end users and enables advanced circuits for 5G, future 6G, SatCom, beamforming, and millimeter-wave applications.

Presentation schedule:
A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers
By Dr. Nabil El-Hinnawy, Principal R&D Engineer, Tower Semiconductor

As part of the Th1B session: Innovative RF Switches, Varactor and Modulator Technologies (full program details available here).

Date & Time: June 19, 2025 at 8:20AM
Location: 205

To meet with Tower’s engineering team during the conference, visit the Company’s booth #655.
For additional details on IMS 2025, please visit the event webpage here.
For additional information about the Company’s RF platform offering, visit here.

About Tower Semiconductor         
Tower Semiconductor Ltd. (NASDAQ/TASE: TSEM), the leading foundry of high-value analog semiconductor solutions, provides technology, development, and process platforms for its customers in growing markets such as consumer, industrial, automotive, mobile, infrastructure, medical and aerospace and defense. Tower Semiconductor focuses on creating a positive and sustainable impact on the world through long-term partnerships and its advanced and innovative analog technology offering, comprised of a broad range of customizable process platforms such as SiGe, BiCMOS, mixed-signal/CMOS, RF CMOS, CMOS image sensor, non-imaging sensors, displays, integrated power management (BCD and 700V), photonics, and MEMS. Tower Semiconductor also provides world-class design enablement for a quick and accurate design cycle as well as process transfer services including development, transfer, and optimization, to IDMs and fabless companies. To provide multi-fab sourcing and extended capacity for its customers, Tower Semiconductor owns one operating facility in Israel (200mm), two in the U.S. (200mm), two in Japan (200mm and 300mm) which it owns through its 51% holdings in TPSCo, shares a 300mm facility in Agrate, Italy with STMicroelectronics as well as has access to a 300mm capacity corridor in Intel’s New Mexico factory. For more information, please visit: www.towersemi.com.

Safe Harbor Regarding Forward-Looking Statements
This press release includes forward-looking statements, which are subject to risks and uncertainties. Actual results may vary from those projected or implied by such forward-looking statements. A complete discussion of risks and uncertainties that may affect the accuracy of forward-looking statements included in this press release or which may otherwise affect Tower’s business is included under the heading “Risk Factors” in Tower’s most recent filings on Forms 20-F, F-3, F-4 and 6-K, as were filed with the Securities and Exchange Commission (the “SEC”) and the Israel Securities Authority. Tower does not intend to update, and expressly disclaim any obligation to update, the information contained in this release. 

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Tower Semiconductor Company Contact: Orit Shahar | +972-74-7377440 | oritsha@towersemi.com
Investor Relations Contact: Liat Avraham | +972-4-6506154 | liatavra@towersemi.com

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FAQ

What will Tower Semiconductor present at IMS 2025?

Tower Semiconductor will present a joint white paper with pSemi titled 'A Low-Loss, Wideband, 0-110 GHz SPDT Using PCM RF Switches with Integrated CMOS Drivers,' which has been nominated for the Best Industry Paper Award.

What are the key features of TSEM's new RF switch technology?

The technology features ultra-wideband performance (DC to 110 GHz with less than 2 dB insertion loss), digital control with MIPI RFFE interface, 30 dBm power handling, and 15-20 dB better linearity than current RFSOI CMOS SPDTs.

When and where will Tower Semiconductor's IMS 2025 presentation take place?

The presentation will take place on June 19, 2025, at 8:20 AM in Room 205 at the International Microwave Symposium in San Francisco, California.

What applications will TSEM's new RF switch technology enable?

The technology enables advanced circuits for 5G, future 6G, SatCom, beamforming, and millimeter-wave applications.

Where can investors meet Tower Semiconductor's engineering team at IMS 2025?

Investors can meet Tower Semiconductor's engineering team at booth #655 during the conference.
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