Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications
Rhea-AI Summary
Vishay Intertechnology (NYSE: VSH) has introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the SOT-227 package. The new components include 40 A to 240 A dual diode devices in parallel configuration, and 50 A and 90 A single phase bridge devices.
The diodes feature a low forward voltage drop down to 1.36 V, reducing conduction losses for increased efficiency. Built on thin wafer technology, they offer improved reverse recovery parameters compared to Si-based diodes with virtually no recovery tail. The devices' low capacitive charge (QC) down to 56 nC enables high-speed switching.
Key applications include AC/DC PFC and DC/DC ultra high frequency output rectification in converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. The diodes operate at temperatures up to +175 °C and feature UL approval. Samples and production quantities are available with 18-week lead times.
Positive
- Introduction of 16 new high-performance SiC Schottky diodes
- Low forward voltage drop (1.36 V) reduces conduction losses
- High-temperature operation capability up to +175 °C
- Immediate availability of samples and production quantities
Negative
- 18-week lead time for production quantities
News Market Reaction – VSH
In the trading session that priced this news, VSH gained 1.05%, reflecting a mild positive market reaction.
Data tracked by StockTitan Argus on the day of publication.
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40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC
MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.
The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.
Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.
The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.
Device Specification Table:
| Part Number | VR (V) | IF(AV) (A) | VF at IF (V) | IFSM (A) | QC (nC) | Configuration |
| VS-SC40FA65 | 650 | 40 | 1.36 | 105 | 56¹ | Two separate diodes, parallel pin-out |
| VS-SC80FA65 | 80 | 1.36 | 225 | 110¹ | Two separate diodes, parallel pin-out | |
| VS-SC120FA65 | 120 | 1.39 | 340 | 164¹ | Two separate diodes, parallel pin-out | |
| VS-SC160FA65 | 160 | 1.38 | 450 | 220¹ | Two separate diodes, parallel pin-out | |
| VS-SC200FA65 | 200 | 1.39 | 555 | 275¹ | Two separate diodes, parallel pin-out | |
| VS-SC240FA65 | 240 | 1.40 | 675 | 328¹ | Two separate diodes, parallel pin-out | |
| VS-SC50BA65 | 50 | 1.50 | 267 | 110¹ | Single phase bridge | |
| VS-SC90BA65 | 90 | 1.61 | 340 | 164¹ | Single phase bridge | |
| VS-SC40FA120 | 1200 | 40 | 1.39 | 130 | 112² | Two separate diodes, parallel pin-out |
| VS-SC80FA120 | 80 | 1.4 | 260 | 224² | Two separate diodes, parallel pin-out | |
| VS-SC120FA120 | 120 | 1.42 | 385 | 333² | Two separate diodes, parallel pin-out | |
| VS-SC160FA120 | 160 | 1.44 | 500 | 444² | Two separate diodes, parallel pin-out | |
| VS-SC200FA120 | 200 | 1.45 | 620 | 553² | Two separate diodes, parallel pin-out | |
| VS-SC240FA120 | 240 | 1.45 | 690 | 651² | Two separate diodes, parallel pin-out | |
| VS-SC50BA120 | 50 | 1.5 | 328 | 223² | Single phase bridge | |
| VS-SC90BA120 | 90 | 1.9 | 500 | 332² | Single phase bridge |
¹VR = 400 V
²VR = 800 V
Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks.
Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.
The DNA of tech® is a registered trademark of Vishay Intertechnology.
Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust
Link to product datasheets:
https://www.vishay.com/search/?searchChoice=part&query=VS-SC
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720323376025
For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com
