Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications

Vishay Intertechnology (NYSE: VSH) has introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the SOT-227 package.

Rhea-AI Summary

Vishay Intertechnology (NYSE: VSH) has introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the SOT-227 package. The new components include 40 A to 240 A dual diode devices in parallel configuration, and 50 A and 90 A single phase bridge devices.

The diodes feature a low forward voltage drop down to 1.36 V, reducing conduction losses for increased efficiency. Built on thin wafer technology, they offer improved reverse recovery parameters compared to Si-based diodes with virtually no recovery tail. The devices' low capacitive charge (QC) down to 56 nC enables high-speed switching.

Key applications include AC/DC PFC and DC/DC ultra high frequency output rectification in converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. The diodes operate at temperatures up to +175 °C and feature UL approval. Samples and production quantities are available with 18-week lead times.

Positive

• Introduction of 16 new high-performance SiC Schottky diodes
• Low forward voltage drop (1.36 V) reduces conduction losses
• High-temperature operation capability up to +175 °C
• Immediate availability of samples and production quantities

Negative

• 18-week lead time for production quantities

Argus Session date unavailable

+1.05% session move Open Argus

Details

News Market Reaction – VSH

The recorded move for VSH in the trading session of this news was +1.05%.

Data tracked by StockTitan Argus. Session date unavailable.

AI-generated analysis. How Rhea-AI works. Not financial advice.

See more from StockTitan in Google Search and AI answers. Adds StockTitan as a preferred source · opens Google

Add on Google Not now

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC

MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (Q_C) and forward voltage drop for diodes in their class.

The devices released today consist of 40 A to 240 A dual diode components in a parallel configuration, and 50 A and 90 A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.

Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low Q_C down to 56 nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.

The diodes deliver high temperature operation to +175 °C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.

Device Specification Table:

Part Number	VR (V)	IF(AV) (A)	VF at IF (V)	IFSM (A)	QC (nC)	Configuration
VS-SC40FA65	650	40	1.36	105	56¹	Two separate diodes, parallel pin-out
VS-SC80FA65		80	1.36	225	110¹	Two separate diodes, parallel pin-out
VS-SC120FA65		120	1.39	340	164¹	Two separate diodes, parallel pin-out
VS-SC160FA65		160	1.38	450	220¹	Two separate diodes, parallel pin-out
VS-SC200FA65		200	1.39	555	275¹	Two separate diodes, parallel pin-out
VS-SC240FA65		240	1.40	675	328¹	Two separate diodes, parallel pin-out
VS-SC50BA65		50	1.50	267	110¹	Single phase bridge
VS-SC90BA65		90	1.61	340	164¹	Single phase bridge
VS-SC40FA120	1200	40	1.39	130	112²	Two separate diodes, parallel pin-out
VS-SC80FA120		80	1.4	260	224²	Two separate diodes, parallel pin-out
VS-SC120FA120		120	1.42	385	333²	Two separate diodes, parallel pin-out
VS-SC160FA120		160	1.44	500	444²	Two separate diodes, parallel pin-out
VS-SC200FA120		200	1.45	620	553²	Two separate diodes, parallel pin-out
VS-SC240FA120		240	1.45	690	651²	Two separate diodes, parallel pin-out
VS-SC50BA120		50	1.5	328	223²	Single phase bridge
VS-SC90BA120		90	1.9	500	332²	Single phase bridge

¹V_R = 400 V
²V_R = 800 V

Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks. 

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.^® Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech^® is a registered trademark of Vishay Intertechnology.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

Link to product datasheets:
https://www.vishay.com/search/?searchChoice=part&query=VS-SC

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720323376025

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com

FAQ

AI-generated questions and answers. How Rhea-AI works. Not financial advice.

What are the key specifications of Vishay's (VSH) new SiC Schottky diodes?

The new SiC Schottky diodes operate at 650 V and 1200 V, feature current ratings from 40 A to 240 A, offer a low forward voltage drop down to 1.36 V, and can operate at temperatures up to +175 °C.

What applications are targeted by VSH's new SiC Schottky diodes?

The diodes are designed for AC/DC PFC and DC/DC ultra high frequency output rectification in converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies.

What is the availability and lead time for VSH's new SiC diodes?

Samples and production quantities are available immediately, with lead times of 18 weeks.

What are the efficiency advantages of VSH's new SiC Schottky diodes?

The diodes offer low forward voltage drop down to 1.36 V reducing conduction losses, better reverse recovery parameters than Si-based diodes, and low capacitive charge down to 56 nC for high-speed switching.