Vishay Intertechnology SOT-227 Power Modules Increase Power Conversion Efficiency While Eliminating the Need for PCB Redesigns

Vishay Intertechnology (VSH) introduced four power modules using 650 V superjunction MOSFETs, a type of power-switching transistor, for industrial applications.

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Vishay Intertechnology (VSH) introduced four power modules using 650 V superjunction MOSFETs, a type of power-switching transistor, for industrial applications.

The devices use the SOT-227 package. Three have single-switch configurations rated at 50 A, 100 A and 150 A; the fourth has a 50 A low side chopper configuration with an integrated silicon carbide diode. Vishay says the package allows replacement of competing devices without circuit-board redesigns. Applications include power converters, charging stations and medical imaging equipment. Sample and production quantities are available now, with lead times of 12 weeks.

Key Figures

New power modules: 4 devices MOSFET voltage rating: 650 V Nominal current ratings: 50 A, 100 A, and 150 A +4 more

New power modules

4 devices

Introduced in the SOT-227 package

MOSFET voltage rating

650 V

Superjunction MOSFETs in all four modules

Nominal current ratings

50 A, 100 A, and 150 A

50 A single-switch and low-side chopper configurations; 100 A and 150 A single-switch

Typical RDS(on)

45, 44, 22, and 14.8 mΩ

VS-FC50LA65, VS-FC50SA65, VS-FC100SA65, and VS-FC150SA65, respectively

Gate charge

167, 167, 338, and 508 nC

VS-FC50LA65, VS-FC50SA65, VS-FC100SA65, and VS-FC150SA65, respectively

Operating temperature range

-55 °C to +150 °C

Power modules

Lead time

12 weeks

Samples and production quantities available now

Key Terms

sot-227, superjunction MOSFET, rds(on), sic diode

4 terms

sot-227 technical

"industry-standard SOT-227 package"

An investigational drug candidate identified by the internal code “sot-227,” used by researchers and companies to track a specific compound through laboratory studies and clinical trials. For investors, such a code signals a potential future product whose clinical results, regulatory approvals, or safety issues can significantly change a company’s valuation—think of it as a prototype being tested; positive test results can boost prospects, while failures create downside risk.

superjunction MOSFET technical

"650 V superjunction MOSFETs in the industry-standard SOT-227 package"

A superjunction MOSFET is a type of power metal–oxide–semiconductor field-effect transistor designed for high-voltage switching with much lower on-resistance than a conventional vertical MOSFET. Its silicon cell structure alternates deeply doped p-type and n-type regions (the “superjunction” or charge‑balance pillars) so the device can sustain high blocking voltage while using a thinner, more highly doped drift region; when turned on, the balanced charges allow current to flow with lower resistance. The design improves conduction efficiency in power-conversion applications but requires more complex fabrication and precise charge balancing to achieve the intended voltage and loss characteristics.

rds(on) technical

"optimized RDS(on)-Qg tradeoff"

rds(on) is the electrical resistance of a power transistor (usually a MOSFET) when it is switched fully on; think of it as how narrow a pipe the current must flow through. Lower rds(on) means less energy lost as heat, better efficiency, and less cooling or larger batteries required. Investors watch rds(on) because it influences product performance, power consumption, component cost and reliability — all of which can affect margins and competitive position.

sic diode technical

"a 50 A device in a low side chopper configuration that integrates a 650 V SiC diode"

A SiC diode is a power semiconductor diode whose semiconductor material is silicon carbide (SiC). Compared with silicon diodes, SiC diodes can switch faster, handle higher voltages and temperatures, and have much lower switching losses and shorter or negligible reverse-recovery time; these properties make them common in high-efficiency, high-power applications such as inverters, converters and motor drives. Trade-offs include higher manufacturing cost, greater sensitivity to certain crystal defects and different leakage/temperature behavior than silicon devices, so circuit designers account for different thermal limits and guardring/packaging requirements.

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Offered in Single-Switch and Low Side Chopper Configurations, Devices Feature Latest 650 V Superjunction MOSFET Technology for an Optimized R_DS(on)-Q_g Tradeoff

MALVERN, Pa., Oct. 01, 2026 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced four new power modules featuring 650 V superjunction MOSFETs in the industry-standard SOT-227 package. Designed to deliver an optimized balance between conduction and switching losses, the Vishay Semiconductors VS-FC50SA65, VS-FC100SA65, VS-FC150SA65, and VS-FC50LA65 support high efficiency power conversion in industrial applications.

The power modules released today include three devices in a single-switch configuration with nominal current ratings of 50 A, 100 A, and 150 A, as well as a 50 A device in a low side chopper configuration that integrates a 650 V SiC diode. All four components leverage the latest high efficiency 650 V superjunction MOSFET technology to achieve a highly competitive tradeoff between on-resistance and gate charge. This allows designers to reduce power losses while maintaining fast switching performance.

The VS-FC50SA65, VS-FC100SA65, VS-FC150SA65, and VS-FC50LA65 will be used as DC/DC converters and DC/AC inverters in solar power inverters and hydrogen generation and fuel cell systems; auxiliary electronics and energy transportation within HVDC infrastructure; charging stations; switch mode power supplies and welding and cutting equipment; UPS, lighting systems, and rail power supplies; and medical imaging equipment such as X-ray and MRI systems.

For the challenging environments of these applications, the power modules offer a wide temperature range of -55 °C to +150 °C. For existing designs, the devices’ SOT-227 package provides a drop-in replacement for competing solutions, lowering costs by eliminating the need for PCB redesigns.

Device Specification Table:

Part number	VS-FC50LA65	VS-FC50SA65	VS-FC100SA65	VS-FC150SA65
VDSS (V)	650	650	650	650
RDS(on) typ. (mΩ)	45	44	22	14.8
Qg (nC)	167	167	338	508
Nominal current rating (A)	50	50	100	150
Configuration	Low side chopper	Single switch	Single switch	Single switch

Sample and production quantities of the VS-FC50SA65, VS-FC100SA65, VS-FC150SA65, and VS-FC50LA65 are available now with lead times of 12 weeks.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.^® Vishay Intertechnology, Inc. is a Fortune 1000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech^® is a registered trademark of Vishay Intertechnology, Inc.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

Links to product datasheets:
http://www.vishay.com/ppg?97328  (VS-FC50LA65)
http://www.vishay.com/ppg?97321  (VS-FC50SA65)
http://www.vishay.com/ppg?97316  (VS-FC100SA65)
http://www.vishay.com/ppg?97317  (VS-FC150SA65)

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720335683165

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
 or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com