Welcome to our dedicated page for Tower Semiconductor SEC filings (Ticker: TSEM), a comprehensive resource for investors and traders seeking official regulatory documents including 10-K annual reports, 10-Q quarterly earnings, 8-K material events, and insider trading forms.
Tower Semiconductor Ltd. filings document a foreign private issuer operating as a specialty semiconductor foundry. Its Form 6-K current reports record financial-results announcements, investor-conference communications, credit-rating updates, technology-platform releases and customer or partner developments involving analog, power-management, silicon photonics and SiGe processes.
The filings also provide public-company disclosure around material events, operating and financial results, capital structure, governance matters and risk factors. Company descriptions in the filings identify Tower's customizable process platforms, design enablement and process-transfer services, and its manufacturing footprint across Israel, the United States, Japan through TPSCo, and a shared 300mm facility in Agrate, Italy with STMicroelectronics.
Tower Semiconductor Ltd. files its annual report detailing operations, strategy and key risks for the year ended December 31, 2025. The company operates specialty semiconductor fabs in Israel, the U.S., Japan and Italy, focused on SiPho, SiGe, power, RF and image-sensor technologies.
Tower plans an aggregate $920 million in capital expenditures, mainly to expand silicon photonics and silicon germanium capacity and other next‑generation capabilities, while acknowledging uncertainty around tool installation timing and future demand. A strategic restructuring in Japan will transfer full ownership of 300mm Fab 7 to Tower and 200mm Fab 5 to Nuvoton’s Japanese unit, with mutual long‑term supply agreements and a targeted closing of April 1, 2027, subject to customary conditions and approvals.
The report highlights exposure to regional conflicts affecting Israeli operations, customer concentration, cyclical demand—especially for AI‑related wafers—equipment and materials supply risks, and approximately $161 million of consolidated debt as of December 31, 2025. Tower states it does not expect to pay dividends in the foreseeable future, prioritizing growth investments and potential capacity expansion over cash distributions.
Tower Semiconductor and Axiro Semiconductor have introduced high-power, high-efficiency Silicon Germanium (SiGe) radar beamforming integrated circuits that are fabricated in Tower’s U.S. facilities. The chips target secure, domestically sourced U.S. defense radar and satcom systems and are described as ramping to volume production.
The new Ku- and X-band BFICs are designed to improve key metrics such as gain, linearity, output power, efficiency and fast switching, supporting demanding modern radar requirements for U.S. defense primes and radar manufacturers. Tower highlights its established aerospace and defense presence and its SiGe technology as a foundation for scalable, mission-critical defense solutions.
Tower Semiconductor Ltd. filed a Form 6-K to announce the timing of its first quarter 2026 financial results and related conference call. The company plans to issue its Q1 2026 earnings release on Wednesday, May 13, 2026, followed by a conference call at 10:00 a.m. Eastern Time, which will include second quarter 2026 guidance.
The call will be webcast via the Investor Relations section of Tower Semiconductor’s website, with advance online registration required to receive dial-in details and a unique PIN. A replay of the teleconference will be available for 90 days, allowing broad access to the discussion of results and outlook.
Tower Semiconductor plans a major expansion of its 300mm manufacturing capacity in Japan as part of a strategic restructuring of its TPSCo joint venture with Nuvoton. Tower will take full ownership of the 300mm Fab 7 through a wholly owned Japanese subsidiary, while Nuvoton’s subsidiary will own the 200mm Fab 5.
The companies will sign mutual long-term supply agreements so existing Tower customers at Fab 5 and Nuvoton customers at Fab 7 continue to receive uninterrupted supply. Subject to customary conditions and regulatory approvals, the transaction is targeted to close on April 1, 2027.
Tower targets combined capacity at its existing 300mm facility in Uozu and an intended adjacent expansion to reach four times current 300mm capacity. The expansion, supported by an option to buy the Fab 7 building and land and contingent METI-backed subsidy for adjacent land, is intended to scale its optical and photonics platforms while keeping the fab cash-from-operations positive during the build-out.
Tower Semiconductor plans a major expansion of its 300mm manufacturing capacity in Japan as part of a strategic restructuring of its TPSCo joint venture with Nuvoton. Tower will take full ownership of the 300mm Fab 7 through a wholly owned Japanese subsidiary, while Nuvoton’s subsidiary will own the 200mm Fab 5.
The companies will sign mutual long-term supply agreements so existing Tower customers at Fab 5 and Nuvoton customers at Fab 7 continue to receive uninterrupted supply. Subject to customary conditions and regulatory approvals, the transaction is targeted to close on April 1, 2027.
Tower targets combined capacity at its existing 300mm facility in Uozu and an intended adjacent expansion to reach four times current 300mm capacity. The expansion, supported by an option to buy the Fab 7 building and land and contingent METI-backed subsidy for adjacent land, is intended to scale its optical and photonics platforms while keeping the fab cash-from-operations positive during the build-out.
Tower Semiconductor reported a framework agreement with Nuvoton’s subsidiary NTCJ to strategically restructure their joint venture TPSCo. Tower currently owns 51% of TPSCo, which operates a 12‑inch fab in Uozu and an 8‑inch fab in Tonami, Japan.
Upon closing, Tower will gain full ownership and operational control of TPSCo’s 12‑inch fab and foundry business. The 8‑inch fab and foundry business will remain in TPSCo, which will become a wholly owned NTCJ subsidiary, with NTCJ paying $25 million to Tower at closing.
The parties plan to maintain uninterrupted customer support, operations, development programs, and employee stability, and will provide production services to each other to support existing products. The transaction is intended to better align assets with each company’s long‑term strategy and strengthen competitiveness, and is expected to close on April 1, 2027, subject to customary conditions and regulatory approvals.
Tower Semiconductor reported a framework agreement with Nuvoton’s subsidiary NTCJ to strategically restructure their joint venture TPSCo. Tower currently owns 51% of TPSCo, which operates a 12‑inch fab in Uozu and an 8‑inch fab in Tonami, Japan.
Upon closing, Tower will gain full ownership and operational control of TPSCo’s 12‑inch fab and foundry business. The 8‑inch fab and foundry business will remain in TPSCo, which will become a wholly owned NTCJ subsidiary, with NTCJ paying $25 million to Tower at closing.
The parties plan to maintain uninterrupted customer support, operations, development programs, and employee stability, and will provide production services to each other to support existing products. The transaction is intended to better align assets with each company’s long‑term strategy and strengthen competitiveness, and is expected to close on April 1, 2027, subject to customary conditions and regulatory approvals.
Tower Semiconductor reported a technology milestone with Coherent, demonstrating 400 Gbps per lane data transmission using a silicon Mach-Zehnder modulator built on Tower’s production-ready silicon photonics (SiPho) process. The test achieved a clear open eye at 420 Gb/s PAM4, using Coherent’s InP continuous‑wave high‑power laser.
This performance is aimed at next-generation 3.2 Tbps optical transceivers and supports both pluggable modules and Co-Packaged Optics for datacenter connections, especially those driven by AI workloads. The announcement underscores Tower’s strategy to leverage existing multi-fab SiPho capacity while it also develops more advanced material systems with Coherent as a key design partner.
Tower Semiconductor announced a new third-generation BCD power management platform featuring high-performance LDMOS technology aimed at tackling the rising power demands of AI data centers and advanced mobile power chips. The platform targets high-current applications, improving power delivery efficiency, reducing heat, and shrinking die size for power management chips.
The technology is designed for Monolithic Smart Power Stage and DrMOS power stages, in a market estimated at about $2.5 billion and projected to exceed $4.7 billion by 2031. Tower is pairing this with its established silicon photonics presence in AI data centers to broaden its role from optical interconnects to efficient AI processor power delivery. The company will showcase these advances at APEC 2026 in San Antonio.
Tower Semiconductor filed a Form 6-K highlighting a new collaboration with Oriole Networks to advance AI infrastructure using nanosecond optical circuit switching. Oriole’s PRISM and PRISM Ultra networking platforms will be built on Tower’s mature silicon photonics platform to deliver ultra-low, deterministic-latency networking for large AI clusters.
The partnership targets the rapidly expanding AI networking market, which Dell’Oro and LightCounting expect to surpass $80 billion by 2030. Tower’s platform integrates lasers, amplification, switching, high-speed modulation, and detection on a single silicon photonics platform, supporting Oriole’s edge-switching architecture for high-radix, high-bandwidth AI networks.
Tower Semiconductor reported that it will participate in OFC 2026, the Optical Fiber Communication Conference and Exhibition, taking place March 17–19, 2026 at the Los Angeles Convention Center, booth #2221. Company representatives will discuss its current and future silicon photonics roadmap.
The company will showcase its silicon photonics platform used for optical transceivers in Scale-Out and telecom, as well as emerging applications such as co-packaged optics, DWDM lasers, optical circuit switching, FMCW LiDARs for Physical AI, and quantum computing. Tower will also highlight its Silicon Germanium BiCMOS offerings that, together with its silicon photonics platform, target higher bandwidth, lower latency and lower power needs of next-generation AI infrastructure.
Tower Semiconductor Ltd. reported solid full-year 2025 growth. Revenue rose to $1,566,104 thousand from $1,436,122 thousand in 2024, mainly from higher wafer shipments and the 300mm Agrate, Italy facility running for a full year. Gross profit increased to $363,854 thousand, keeping margins broadly stable.
Net profit attributable to the company grew to $220,470 thousand from $207,864 thousand, with basic earnings per share up to $1.97 from $1.87. Financing income, net, improved to $56,738 thousand while other expense, net, declined to $10,527 thousand, partly offset by higher income tax expense of $21,569 thousand.
Operating cash flow was strong at $395,482 thousand, funding heavy investments in property and equipment of $444,425 thousand. Cash and cash equivalents ended at $235,369 thousand, and total shareholders’ equity increased to $2,904,583 thousand, reflecting retained earnings growth and ongoing stock-based compensation activity.