Welcome to our dedicated page for Sk Hynix news (Ticker: HXSCL), a resource for investors and traders seeking the latest updates and insights on Sk Hynix stock.
SK hynix Inc. S/GDR 144A (HXSCL) is tied to SK hynix Inc., a Korea-headquartered semiconductor supplier known for DRAM and NAND flash memory. The news flow around the company focuses heavily on memory technologies for AI, advanced manufacturing, and high-performance storage solutions.
Recent company announcements highlight the completion of development and preparation for mass production of HBM4, a next generation high bandwidth memory product for ultra-high performance AI. SK hynix describes HBM4 as offering increased bandwidth and improved power efficiency compared to the previous generation, and positions it as a core product for overcoming AI infrastructure limitations.
News items also cover the company’s work in NAND flash, including development and mass production of a 321-layer 2Tb QLC NAND flash product. SK hynix states that this high-density NAND is intended for PC SSDs, enterprise SSDs for data centers, and UFS for smartphones, and that it supports ultra-high-capacity storage for AI servers and data centers.
On the mobile side, SK hynix has announced ZUFS 4.1, a Zoned UFS 4.1 mobile NAND solution described as optimized for on-device AI and large-scale data processing, as well as a UFS 4.1 solution based on 321-layer NAND. Additional news covers mobile DRAM with High-K Epoxy Molding Compound for improved heat dissipation in smartphones.
Investors and observers following HXSCL-related news can expect updates on AI memory products such as HBM, DRAM modules for AI servers and PCs, CXL-based DDR5 solutions, high-layer-count NAND flash, and financial results that the company links to AI-driven memory demand. Bookmark this page to review ongoing developments in SK hynix’s DRAM, NAND, and AI memory roadmap as disclosed through its press releases and announcements.
SK hynix (OTC:HXSCL) has achieved a significant milestone by completing the world's first development of HBM4 (High Bandwidth Memory) and preparing for mass production. The next-generation memory product for AI applications demonstrates remarkable improvements over its predecessor, featuring doubled bandwidth through 2,048 I/O terminals and 40% better power efficiency.
The company has exceeded JEDEC standards by implementing over 10Gbps operating speed, compared to the standard 8Gbps. SK hynix expects the HBM4 implementation to improve AI service performance by up to 69%, significantly reducing data center power costs. The product utilizes Advanced MR-MUF process and 1bnm technology to ensure reliable mass production.
[ "First company globally to complete HBM4 development and prepare for mass production", "Doubled bandwidth and 40% improved power efficiency compared to previous generation", "Expected to improve AI service performance by up to 69%", "Exceeds JEDEC standard operating speed (10Gbps vs 8Gbps standard)" ]SK hynix (HXSCL) has commenced mass production and supply of ZUFS 4.1, the world's first high-performance mobile NAND solution optimized for on-device AI applications. The solution significantly enhances smartphone performance, achieving a 45% reduction in app launch times and 47% reduction in AI app launch times compared to conventional UFS.
ZUFS 4.1 implements Zoned Storage technology, storing data in different zones based on usage patterns. The solution demonstrates 4x better sustained read performance over extended use compared to traditional UFS. Following successful qualification in June 2025 and mass production initiation in July, SK hynix aims to strengthen its position in the AI memory sector through strategic partnerships.
SK hynix (OTC:HXSCL) has achieved a significant technological milestone by installing the industry's first High NA EUV lithography system for mass production at its M16 fabrication plant in Icheon, South Korea. The TWINSCAN EXE:5200B, developed by ASML, represents a major advancement in semiconductor manufacturing technology.
The new system enables 1.7x smaller transistors and 2.9x higher transistor densities compared to existing EUV systems, with a 40% improvement in NA from 0.33 to 0.55. This breakthrough will help SK hynix simplify its EUV process, accelerate next-generation memory development, and strengthen its position in high-value memory products, particularly for AI and next-generation computing markets.
SK hynix (HXSCL) has pioneered the industry's first mobile DRAM with enhanced heat dissipation capabilities by implementing High-K Epoxy Molding Compound (EMC) technology. The innovation improves thermal conductivity by 3.5 times and reduces thermal resistance by 47% compared to traditional solutions.
The breakthrough addresses critical heat management challenges in smartphones running on-device AI applications, particularly in flagship models using Package on Package (PoP) architecture. By adding Alumina to existing Silica-based EMC material, SK hynix has created a solution that promises to extend battery life and device longevity while maintaining optimal performance.
SK hynix (HXSCL) has achieved a significant technological breakthrough with the mass production of its 321-layer 2Tb QLC NAND flash, marking the industry's first implementation of 300+ layers using QLC technology. The new product features doubled capacity and enhanced performance metrics, including 56% improved write performance, 18% better read performance, and 23% increased write power efficiency.
The company has increased the number of planes from 4 to 6 for better parallel processing and will initially target PC SSDs before expanding to enterprise SSDs for data centers and UFS for smartphones. Using its proprietary 32DP technology, SK hynix aims to strengthen its position in the ultra-high-capacity eSSD market for AI servers.
SK hynix (HXSCL) reported exceptional Q2 2025 financial results, achieving all-time high revenues of 22.232 trillion won and operating profit of 9.2129 trillion won with a strong 41% operating margin. Net profit reached 6.9962 trillion won with a 31% net margin.
The company's outstanding performance was driven by increased demand for AI memory from global tech companies. Cash and equivalents grew to 17 trillion won, while debt and net debt ratios remained healthy at 25% and 6% respectively. SK hynix expanded sales of 12-high HBM3E DRAM and saw growth across all NAND applications.
Looking ahead, the company plans to double HBM production year-over-year and will launch new products including LPDDR-based server modules and GDDR7 with expanded 24Gb capacity for AI GPUs.
SK hynix (HXSCL) has developed a new UFS 4.1 solution featuring the world's highest 321-layer 1Tb triple level cell 4D NAND flash for mobile applications. The product, optimized for on-device AI, offers 7% better power efficiency and is 15% thinner (0.85mm) compared to its predecessor. Key performance improvements include 4300MB/s sequential read speed and enhanced random read and write speeds of 15% and 40% respectively.
The company plans to secure customer qualification in 2025 and begin volume shipments in Q1 2026, offering 512GB and 1TB capacity options. SK hynix also aims to develop 321-high 4D NAND-based SSDs for consumer and data center markets within the year.
SK hynix reported strong Q1 2025 financial results with revenues of 17.6391 trillion won and operating profit of 7.4405 trillion won, marking their second-highest quarterly performance. The company achieved a net profit of 8.1082 trillion won with a 46% net margin.
The operating margin improved to 42%, marking the eighth consecutive quarter of growth. The company's success was driven by increased memory market demand for AI systems and inventory accumulation. Notable achievements include expanded sales of 12-layer HBM3E and DDR5 products.
Cash and cash equivalents rose to 14.3 trillion won, improving debt and net debt ratios to 29% and 11% respectively. The company expects HBM demand to double compared to last year, with 12-layer HBM3E projected to represent over 50% of total HBM3E revenues in Q2 2025.
SK hynix has successfully completed customer validation of its 96GB CMM-DDR5, a DRAM solution based on CXL 2.0 technology. The product demonstrates a 50% increase in capacity and 30% improvement in bandwidth compared to previous DDR5 modules, processing at 36GB/s when applied to server systems.
The company is also validating a 128GB product featuring 32Gb DDR5 DRAM using 1bnm process technology, aimed at delivering enhanced performance per watt. Additionally, SK hynix has integrated its HMSDK software with Linux to optimize CMM-DDR5 performance and expand the CXL ecosystem.
