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Navitas Semiconductor Corp (NVTS) drives innovation in next-generation power electronics through its GaN and SiC semiconductor solutions. This news hub provides investors and industry professionals with essential updates on technological breakthroughs, strategic partnerships, and market developments.
Access curated press releases and analysis covering earnings reports, product launches, and sustainability initiatives. Stay informed about NVTS' leadership in energy-efficient power conversion technologies serving mobile, EV, and data center markets.
Discover updates on patent milestones, manufacturing expansions, and industry collaborations that demonstrate Navitas' technical expertise in high-frequency power ICs. Our collection ensures you never miss critical developments impacting this semiconductor innovator.
Bookmark this page for streamlined access to verified NVTS updates. Check regularly for new insights into GaNFast technology advancements and their global impact on power electronics efficiency.
Navitas Semiconductor (NVTS) has unveiled a new family of GaNSense™ Motor Drive ICs designed for home appliances and industrial drives up to 600W. The integrated solution combines two GaN FETs in a half-bridge configuration, offering significant advantages over traditional silicon IGBT solutions, including 4% higher efficiency, 40% smaller PCB footprint, and 15% lower system cost.
The 650V family includes models NV6257, NV6287, and NV6288, featuring bidirectional lossless current sensing, adjustable slew rates, and autonomous freewheeling function. Key applications include air conditioners, heat pumps, washing machines, dryers, dishwashers, refrigerators, hair dryers, and industrial drives for pumps, circulators, and fans.
The ICs incorporate comprehensive safety features including short circuit protection, over-temperature protection, and 2kV ESD protection on all pins.Navitas Semiconductor (NVTS) has announced significant corporate governance changes to enhance stockholder value. Richard Hendrix, an independent director since 2021, has been appointed as Board Chair, replacing CEO Gene Sheridan who remains on the board and continues as CEO.
The company has formed an Executive Steering Committee focused on expense management, product roadmap acceleration, go-to-market strategies, and executive appointments. The committee will be chaired by Dr. Ranbir Singh, with Richard Hendrix and David Moxam as members.
In another key change, Daniel Kinzer, co-founder and CTO/COO, has stepped down from his executive roles and board position but will continue as an advisor for GaN technology. The board plans to appoint a new independent director for election as a Class I director at the 2025 annual stockholders' meeting.
Navitas Semiconductor (NVTS) will showcase several breakthrough technologies in GaN and SiC power semiconductors at PCIM 2025. The company announced the world's first production-released 650V bi-directional GaNFast ICs with IsoFast drivers, enabling single-stage topologies for EV charging and solar applications.
Key innovations include automotive-qualified GaNSafe ICs, advanced SiCPAK power modules with 5x lower thermal resistance, and new GaNSense Motor Drive ICs. The company also introduced GaNSlim™ for integrated power solutions and demonstrated the world's first 8.5kW AI data center power supply achieving 98% efficiency, along with a 4.5kW power supply featuring 137 W/in³ density.
Navitas Semiconductor (NVTS) has scheduled its Q1 2025 financial results announcement for Monday, May 5th, 2025, after market close. The company will host a conference call and live webcast at 2:00 p.m. Pacific / 5:00 p.m. Eastern the same day.
Investors and analysts can access the conference call via toll-free numbers (888) 596-4144 or (646) 968-2525 using Conference ID: 2033529. A live webcast will be available, and a replay can be accessed through the Investor Relations section of Navitas' website.
Navitas Semiconductor (NVTS) has unveiled its latest SiCPAK™ power modules featuring advanced epoxy-resin potting technology and proprietary trench-assisted planar SiC MOSFET technology. The new 1200V modules demonstrate 5x lower thermal resistance increase after thermal shock testing compared to conventional silicone-gel-filled modules.
Key features include:
- Enhanced reliability in high-humidity environments
- Up to 20% lower losses and cooler operation
- Superior isolation test performance compared to silicone-gel modules
- Available in ratings from 4.6 mΩ to 18.5 mΩ
The modules target multiple applications including EV DC fast chargers, industrial motor drives, power supplies, solar inverters, energy storage systems, industrial welding, and induction heating. The products are immediately available for mass production with optional pre-applied Thermal Interface Material.
Navitas Semiconductor (NVTS) has achieved a significant milestone with its high-power GaNSafe™ ICs receiving both AEC-Q100 and AEC-Q101 automotive qualifications. The company's 4th generation GaNSafe family integrates advanced features including 350ns max latency short-circuit protection, 2kV ESD protection, and programmable slew rate control, all managed through a simplified 4-pin interface.
The qualification validates both discrete power FET stage and IC solution compliance with automotive standards. Navitas' comprehensive reliability report, analyzing over 7 years of production data, demonstrates field failure rates approaching 100 parts per billion (ppb) across more than 250 million shipped units.
In March 2025, Navitas also introduced the first 650V Bi-Directional GaNFast ICs with IsoFast Drivers, enabling single-stage topologies in AC-DC and AC-AC conversion. This innovation promises up to 10% cost savings, 20% energy savings, and 50% size reductions in EV on-board chargers.
Navitas Semiconductor (NVTS) has partnered with Great Wall Power to develop a groundbreaking 2.5kW ultra-high power density DC-DC converter for AI data centers, powered by Navitas' GaNSense technology. The converter achieves a world-leading power density of 92.36W/cm³, delivering 8x more power than traditional silicon designs.
The solution features a half-load efficiency of 97.9% and operates within a 320-420 VDC input range, meeting Open Compute Project (OCP) efficiency guidelines. The converter utilizes Navitas' GaNSense NV6169, a 650V, 45 mΩ device that provides 50% more power than previous designs, with industry-first features including loss-less current sensing and rapid short-circuit protection.
This partnership aims to advance 400V-DC power architecture for AI data centers, telecommunications, and industrial equipment, focusing on smaller size, higher efficiency, and greater independence to enhance computing power while reducing energy consumption.
Navitas Semiconductor (NVTS) and GigaDevice have announced a strategic partnership to establish a joint laboratory focused on integrating Navitas' GaNFast™ ICs with GigaDevice's microcontrollers. The collaboration aims to accelerate the adoption of GaN and SiC technologies in AI data centers, electric vehicles, solar, and energy storage systems.
The partnership combines Navitas' expertise in next-generation power semiconductor technology with GigaDevice's advanced MCU capabilities. GigaDevice, a leader in China's MCU market with over 2 billion units shipped, brings its GD32 high-performance MCU series to the collaboration. Navitas contributes its GaNFast™ power ICs, which enable 3x more power and 3x faster charging in half the size compared to traditional silicon devices.
The joint R&D laboratory will focus on developing intelligent and efficient power management solutions, optimizing MCUs for high-frequency switching characteristics and fast I/O capabilities.
Navitas Semiconductor (NVTS) has partnered with Great Wall to develop a groundbreaking 2.5kW ultra-high power density DC-DC converter for AI data centers, powered by Navitas' GaNSense technology. The converter achieves the world's highest power density of 92.36W/cm³, delivering 8x more output power than traditional silicon designs.
The solution features a half-load efficiency of 97.9% and operates within a 320-420 VDC input range, meeting Open Compute Project (OCP) efficiency guidelines. The converter utilizes Navitas' GaNSense NV6169, a 650V, 45 mΩ device that provides 50% more power than previous designs, featuring industry-first capabilities like loss-less current sensing and rapid short-circuit protection.
This advancement supports the emerging trend of 400V independent cabinet architecture in AI data centers, enabling increased GPU computing power while reducing energy consumption and supporting sustainability goals.
Navitas Semiconductor (NVTS) has announced that its GaNSafe and Gen 3 'Fast' SiC MOSFETs enable their AI data center power supply unit (PSU) reference designs to achieve system efficiencies of 96.5% to 98%. The company's portfolio includes 3.2kW, 4.5kW, and 8.5kW PSU designs aimed at meeting the new 80 PLUS® Ruby certification, the most rigorous PSU efficiency standard in 14 years.
The Ruby certification requires an additional 1% system efficiency across most load conditions compared to the previous Titanium standard. Each Ruby-certified 3.2 kW CRPS185 PSU can save up to 420 kilowatt-hours over a 3-year lifetime, equivalent to over 400 kg of CO2 emissions reduction.
Navitas has demonstrated leadership in AI data center solutions with achievements including a 40% smaller 3.2 kW CRPS, a 4.5 kW CRPS with 137 W/in3 density and 97% efficiency, and the world's first 8.5 kW AI data center power supply reaching 98% efficiency. The company's IntelliWeave digital control technique, combined with their semiconductors, enables PFC peak efficiencies of 99.3%.
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