Welcome to our dedicated page for Navitas Semiconductor news (Ticker: NVTS), a resource for investors and traders seeking the latest updates and insights on Navitas Semiconductor stock.
Navitas Semiconductor Corporation (Nasdaq: NVTS) is a power semiconductor company focused on gallium nitride (GaN) power ICs and high-voltage silicon carbide (SiC) devices for high-power markets such as AI data centers, performance computing, energy and grid infrastructure, and industrial electrification. The company’s news flow reflects both its technology roadmap and its strategic transition toward these segments, which it refers to as “Navitas 2.0.”
On this page, readers can follow NVTS news related to product announcements, strategic partnerships, capital raises, and investor events. Recent press releases have highlighted ultra-high-voltage GeneSiC™ SiC MOSFET portfolios at 2300V and 3300V, packaging developments such as SiCPAK™ G+ power modules, and the introduction of the company’s AEC‑Plus reliability benchmark for SiC devices. Other updates describe collaborations with partners including GlobalFoundries on U.S.-based GaN technology and manufacturing, GigaDevice on a digital power joint lab, and distribution agreements with Avnet and WT Microelectronics.
Investors and industry observers can also track corporate developments such as private placements of common stock, at-the-market offering activity, leadership changes, and participation in technology and investor conferences. Earnings-related releases, including quarterly financial results and associated outlook commentary, provide additional context on how Navitas is reallocating resources toward high-power applications and adjusting its distribution network.
By reviewing the Navitas news feed, users can see how the company positions its GaNFast™ and GeneSiC™ platforms in emerging high-power markets, how it engages with ecosystem partners, and how its strategic focus evolves over time. This page offers a centralized view of NVTS announcements for those following developments in wide bandgap power semiconductors and related infrastructure markets.
Navitas (Nasdaq: NVTS) will exhibit at APEC 2026 in San Antonio, March 22–26 (booth #2027), showcasing GaN and SiC power solutions for AI data centers, HPC, grid and industrial electrification.
Highlights include a 10 kW 800V→50V GaN DC-DC brick at 98.5% peak efficiency, 2.1 kW/in³ density, 12 kW, 8.5 kW and 4.5 kW supplies, UHV SiCPAK modules (3300V/2300V/1200V), and compact 240W/300W GaN solutions.
Navitas (Nasdaq: NVTS) will present at the Morgan Stanley Technology, Media & Telecom Conference on March 3, 2026 at the Palace Hotel in San Francisco. President and CEO Chris Allexandre will host a fireside chat at 12:20 p.m. PT and be available for investor meetings that day. A live and archived audio webcast will be available in the company's Events section.
Navitas Semiconductor (Nasdaq: NVTS) reported fourth-quarter and full-year 2025 results, completing a strategic pivot to high-power GaN and SiC markets.
Q4 revenue was $7.3M, GAAP loss from operations $41.4M, cash of $236.9M, and a completed private placement netting $95.6M.
Navitas (Nasdaq: NVTS) launched its 5th-generation GeneSiC Trench-Assisted Planar (TAP) 1200V SiC MOSFET platform on Feb 12, 2026, targeting AI data centers, grid & energy infrastructure, and industrial electrification.
The platform reports a 35% improved RDS,ON × QGD FoM, ~25% better QGD/QGS ratio, AEC-Plus qualification, 3x longer static high-temperature/high-voltage stress testing, and extrapolated gate-oxide reliability >1 million years at 18V/175°C.
Navitas (Nasdaq: NVTS) unveiled a 10 kW all-GaN DC-DC platform for 800 VDC and +/-400 V architectures delivering up to 98.5% peak efficiency, 98.1% full-load efficiency, 1 MHz switching, and 2.1 kW/in³ power density in a full-brick (61×116×11 mm) package.
The production-oriented design uses 650 V and 100 V GaNFast FETs in a three-level half-bridge with synchronous rectification and integrates auxiliary power and control; collaborative evaluations are underway and the platform debuts at APEC, March 22–26, 2026.
Navitas Semiconductor (Nasdaq: NVTS) will report fourth quarter and full year 2025 financial results on Tuesday, February 24, 2026 after the market close. A conference call with President & CEO Chris Allexandre and CFO Todd Glickman is scheduled for 2:00 p.m. PT (5:00 p.m. ET).
Analysts and investors can join by phone (toll free 1-800-715-9871 or 1-646-307-1963, Conference ID 4101022) or via a live and archived webcast with slides on the company investor relations site.
Navitas Semiconductor (NVTS) will present at the 28th Annual Needham Growth Conference on January 14, 2026 at the Lotte New York Palace Hotel. President and CEO Chris Allexandre will host a fireside chat on January 14, 2026 at 2:15 p.m. EST and will be available for investor meetings throughout the day. A live and archived audio webcast of the fireside chat will be available in the Events section of Navitas’ Investor Relations website. Portfolio managers and analysts should contact their Needham & Company representative to request meetings with management.
Navitas (Nasdaq: NVTS) expanded its distribution agreement with Avnet, making Avnet a globally franchised strategic distributor for Navitas’ GaNFast and GeneSiC wide bandgap products, effective Dec 11, 2025. The move consolidates Navitas’ franchised distribution partners, builds on Avnet Silica’s European success, and aims to provide faster global access and consistent technical support for high-power markets including AI data centers, HPC, renewable energy, grid infrastructure, and industrial electrification.
The partnership assigns Avnet commercial and engineering responsibilities to accelerate adoption of Navitas’ GaN and SiC platforms worldwide.
Navitas Semiconductor (Nasdaq: NVTS) and Cyient Semiconductors announced a strategic long-term partnership on December 8, 2025 to accelerate adoption of GaN technology in India.
The collaboration intends to co-develop GaN products, digital and mixed-signal ICs, GaN system modules, and design enablement platforms targeting AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partners aim to build a local GaN supply chain and manufacturing ecosystem aligned with India’s “Make in India” initiative to shorten time-to-market and provide local procurement, engineering collaboration, and technical support.
Navitas (Nasdaq: NVTS) announced sample availability of new 3300V and 2300V ultra-high-voltage GeneSiC silicon carbide (SiC) MOSFETs in power module, discrete and known-good-die (KGD) formats on Dec 1, 2025. The products use a proprietary Trench-Assisted Planar (TAP) architecture to improve voltage blocking, avalanche robustness, switching figures of merit and hot-temperature on-resistance.
Navitas also introduced SiCPAK G+ power modules with an epoxy-resin potting that delivers a >60% improvement in power-cycling lifetime and >10x thermal-shock reliability, AlN DBC substrates, and higher-current press-fit pins. An AEC-Plus reliability benchmark and advanced KGD screening were announced to support mission-critical grid, energy storage, AI data center, and megawatt fast-charging applications.