Navitas Semiconductor Corp Stock Price, News & Analysis

Navitas Semiconductor (Nasdaq: NVTS) and Cyient Semiconductors announced a strategic long-term partnership on December 8, 2025 to accelerate adoption of GaN technology in India.

The collaboration intends to co-develop GaN products, digital and mixed-signal ICs, GaN system modules, and design enablement platforms targeting AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partners aim to build a local GaN supply chain and manufacturing ecosystem aligned with India’s “Make in India” initiative to shorten time-to-market and provide local procurement, engineering collaboration, and technical support.

Navitas (Nasdaq: NVTS) announced sample availability of new 3300V and 2300V ultra-high-voltage GeneSiC silicon carbide (SiC) MOSFETs in power module, discrete and known-good-die (KGD) formats on Dec 1, 2025. The products use a proprietary Trench-Assisted Planar (TAP) architecture to improve voltage blocking, avalanche robustness, switching figures of merit and hot-temperature on-resistance.

Navitas also introduced SiCPAK G+ power modules with an epoxy-resin potting that delivers a >60% improvement in power-cycling lifetime and >10x thermal-shock reliability, AlN DBC substrates, and higher-current press-fit pins. An AEC-Plus reliability benchmark and advanced KGD screening were announced to support mission-critical grid, energy storage, AI data center, and megawatt fast-charging applications.

Navitas Semiconductor (Nasdaq: NVTS) and WT Microelectronics (TW: 3036) announced an expanded strategic distribution partnership in Asia on Nov 27, 2025. Navitas has consolidated its franchised distributor base while WT will allocate expanded technical and commercial resources and lead customer engagement and design‑in activities.

The arrangement aims to improve regional logistics, product availability, and design support for GaN and SiC power devices serving AI data centers, performance computing, energy grid infrastructure and industrial electrification customers.

Navitas Semiconductor (Nasdaq: NVTS) and GlobalFoundries (Nasdaq: GFS) announced a long-term partnership to scale U.S.-based gallium nitride (GaN) design and manufacturing for high-power applications including AI datacenters, performance computing, energy and grid infrastructure, and industrial electrification.

Development is set for early 2026 with production expected later in 2026 at GF’s Burlington, Vermont facility, combining GF’s foundry capacity and Navitas’ GaN device expertise to provide a domestic supply pathway, support national security, and advance decarbonization goals.

Navitas Semiconductor (NASDAQ: NVTS) will participate in the UBS Global Technology and AI Conference on December 3, 2025. Management will hold 1-on-1 meetings: Chris Allexandre, President and CEO, and Todd Glickman, CFO. The meetings are scheduled at The Phoenician in Scottsdale, AZ and are intended for investor engagement and company updates.

Navitas (NASDAQ: NVTS) entered a definitive purchase agreement to sell 14,814,813 shares of Class A common stock at $6.75 per share for aggregate gross proceeds of approximately $100 million. The private placement is expected to close on or about November 10, 2025, subject to customary closing conditions, with Needham & Company as sole placement agent.

Net proceeds are intended for working capital and general corporate purposes to support the company’s Navitas 2.0 strategy focused on high-power markets (AI data centers, performance computing, energy/grid, industrial electrification). The company will file a resale registration statement with the SEC within five business days and aims for effectiveness within 120 days if the SEC conducts a full review.

Navitas Semiconductor (NASDAQ: NVTS) reported unaudited results for Q3 ended Sept 30, 2025 as it pivots from mobile/consumer to high-power markets (AI data centers, performance computing, energy & grid, industrial electrification).

Key figures: Q3 revenue $10.1M vs $21.7M in Q3 2024; GAAP loss from operations $19.4M (improved vs $29.0M year-ago); non-GAAP loss from operations $11.5M; cash $150.6M as of Sept 30, 2025. Company highlighted collaboration with NVIDIA on 800V DC AI factory architecture and sampling of 2.3kV/3.3kV SiC modules.

Outlook: Q4 2025 revenue expected $7.0M ± $0.25M; non-GAAP gross margin ~38.5% ±50bps; non-GAAP operating expenses ~ $15.0M.

GigaDevice and Navitas Semiconductor (NVTS) launched a Digital Power Joint Lab on October 15, 2025 to accelerate high-efficiency digital power solutions for AI data centers, PV inverters, energy storage, charging infrastructure, and EVs.

Pre-launch milestones include a 500W single-stage PV micro-inverter (GD32G553 MCU + GaNFast Bi-Directional ICs) with >97.5% peak efficiency, CEC >97%, and MPPT >99.9%; and 4.5 kW and 12 kW server power solutions. The 12 kW design meets OCP, ORv3, CRPS standards and reaches 97.8% peak efficiency, exceeding the 80 PLUS Ruby benchmark. The lab will produce system-level reference designs and application-specific solutions to drive smarter, greener power electronics through technology integration and higher power density.

Navitas Semiconductor (NASDAQ: NVTS) announced new medium- and high-voltage GaN and SiC power devices designed to support NVIDIA’s 800 VDC AI factory architecture on Oct 13, 2025. Key introductions include 100 V GaN FETs for GPU board DC-DC stages, a 650 V GaN portfolio with GaNSafe power ICs, and a high-voltage GeneSiC SiC MOSFET lineup.

Highlights: 100 V GaN built on a 200 mm GaN-on-Si process via a Power Chip partnership; GaNSafe features 350 ns short-circuit protection and 2 kV ESD; GeneSiC covers 650 V–6,500 V and has been used in DoE-backed megawatt projects. Samples, datasheets, and eval boards are available for qualified customers.