Navitas’ new ‘IntelliWeave’ Control Technique Powers Next-Gen AI Data Centers above 99% Efficiency
Rhea-AI Summary
Navitas Semiconductor (Nasdaq: NVTS) is set to introduce 'IntelliWeave', a patented digital control technique for improving AI data center power supply efficiency, at the IEEE Energy Conversion Congress and Expo (ECCE) this month. IntelliWeave combines next-generation GaN and SiC semiconductors with innovative control strategies to achieve:
- Peak efficiencies up to 99.3% in Power Factor Control (PFC)
- 30% reduction in power losses compared to existing solutions
- Precision current sharing and ultra-fast dynamic response
- Zero voltage switching across the full-load range
The technology has been proven on a 500 kHz GaN-based interleaving 3.2 kW CrM PFC PSU. Navitas' Director, Tao Wei, will present on this novel digital control at ECCE 2024 in Phoenix, Arizona on October 21st.
AI-generated analysis. Not financial advice.
Positive
- IntelliWeave achieves peak efficiencies up to 99.3% in Power Factor Control
- 30% reduction in power losses compared to existing solutions
- Proven technology on a 500 kHz GaN-based interleaving 3.2 kW CrM PFC PSU
- Patented dual-loop and dual-feed-forward interleaving control for absolute zero voltage switching
Negative
- None.
Insights
The introduction of Navitas' IntelliWeave digital control technique marks a significant advancement in data center power efficiency. By achieving peak efficiencies of
The key features of IntelliWeave, including precision current sharing, ultra-fast dynamic response and minimal phase error, are important for optimizing power conversion in high-performance computing environments. The patented dual-loop and dual-feed-forward interleaving control, enabling zero voltage switching across the full load range, is particularly noteworthy for its potential to significantly reduce energy waste.
For investors, this development positions Navitas strongly in the competitive power semiconductor market, especially for data center applications. The company's integration of advanced GaN and SiC technologies with innovative control techniques could lead to increased market share and revenue growth in the burgeoning AI infrastructure sector.
Navitas' IntelliWeave technology aligns perfectly with the growing demand for energy-efficient solutions in data centers, a market projected to reach
The presentation at IEEE ECCE 2024 provides Navitas with a platform to showcase its innovation to industry leaders and potential customers. This exposure could lead to new partnerships and contracts, potentially boosting the company's market position and stock value.
However, investors should note that Navitas, with a market cap of
IntelliWeave’s patented digital control combined with high-power GaNSafe™ and Gen 3-Fast SiC MOSFETs enable PFC peak efficiencies to
TORRANCE, Calif., Oct. 18, 2024 (GLOBE NEWSWIRE) -- At this month’s IEEE Energy Conversion Congress and Expo (ECCE), Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will introduce conference attendees to ‘IntelliWeave’ – an innovative patented new digital control technique for improving next generation AI data center power supply (PSU) efficiency.
In a world where ever-more energy is needed for the processing of artificial intelligence (AI) and cloud-based applications, minimizing power consumption has become a priority for data center architects and operators. Combining next-generation GaN and SiC semiconductors with new control technique strategies to power conversion plays a key role in achieving this goal.
IntelliWeave’s novel digital control enables highest system efficiencies with precision current sharing, ultra-fast dynamic response and minimal phase error. A patented dual-loop and dual-feed-forward interleaving control achieves absolute zero voltage switching (ZVS) across the full-load range to enable highest efficiencies. The digital control for Critical Conduction Mode (CRM) interleaving Totem Pole Power Factor Control (PFC) enables
Taking place in Phoenix, Arizona from October 20th to 24th, IEEE ECCE 2024 features both industry-driven and application-oriented technical sessions and brings together practicing engineers, researchers and other professionals for interactive and multidisciplinary discussions on the latest advances in various areas related to energy conversion.
Tao Wei, Director, will present “Novel digital control for a GaN-based CrM interleaved TP PFC,” on Monday October 21st at 5.30pm in the main Expo Hall.
To find out more visit www.navitassemi.com
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile, and consumer. Over 250 Navitas patents are issued or pending. Navitas offers the industry’s first and only 20-year GaNFast warranty and was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GaNSafe, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information:
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
Stephen Oliver, VP Investor Relations
ir@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/760d01d3-fd69-40d5-9bae-c3ef2712c184
