Navitas to Showcase Breakthrough GaN and SiC Based Solutions for AI Data Center, Energy and Grid Infrastructure, and Industrial Electrification at PCIM 2026

Rhea-AI Summary

Navitas Semiconductor (Nasdaq: NVTS) will showcase next‑generation GaNFast and GeneSiC SiC power solutions at PCIM Europe 2026 in Nuremberg, June 9–11. Demonstrations target AI data centers, energy and grid infrastructure, and industrial electrification, including 800 VDC platforms, solid-state transformer topologies, and GaN-based motor-drive ICs.

AI-generated analysis. Not financial advice.

News Market Reaction – NVTS

-7.74%

50 alerts

-7.74% News Effect

-13.4% Trough in 24 hr 36 min

-$396M Valuation Impact

$4.72B Market Cap

0.5x Rel. Volume

On the day this news was published, NVTS declined 7.74%, reflecting a notable negative market reaction. Argus tracked a trough of -13.4% from its starting point during tracking. Our momentum scanner triggered 50 alerts that day, indicating high trading interest and price volatility. This price movement removed approximately $396M from the company's valuation, bringing the market cap to $4.72B at that time.

Data tracked by StockTitan Argus on the day of publication.

Key Figures

AI PDB Power: 20 kW PDB Efficiency: 97.5% peak DC-DC Power: 10 kW +5 more

8 metrics

AI PDB Power 20 kW 800 V-to-6 V power delivery board for AI data center

PDB Efficiency 97.5% peak 20 kW 800 V-to-6 V AI data center board

DC-DC Power 10 kW 800 V-to-50 V DC-DC full-brick platform

Power Density 2.1 kW/in³ 10 kW 800 V-to-50 V DC-DC platform

DC-DC Efficiency 98.5% peak 10 kW 800 V-to-50 V DC-DC platform

SiC Voltage Class 3300 V / 2300 V / 1200 V Trench Assisted Planar SiC devices for grid and AI

SST Rating 50 kVA Bi-directional Active Front End DAB SST solution

Event Dates June 9–11 PCIM Europe 2026 exhibition schedule

Market Reality Check

Price: $24.38 Vol: Volume 31,287,931 is at 0...

normal vol

$24.38 Last Close

Volume Volume 31,287,931 is at 0.73x the 20-day average of 42,663,489, suggesting no outsized trading vs. recent activity. normal

Technical Shares at $21.32 are trading above the 200-day MA of $9.66 and about 10.5% below the $23.82 52-week high.

Peers on Argus

NVTS was down 4.48% while close peers showed mixed moves: MXL up 11.44%, HIMX up...

1 Up

NVTS was down 4.48% while close peers showed mixed moves: MXL up 11.44%, HIMX up 0.29%, AOSL up 0.28%, CEVA up 1.05%, and LASR down 2.07%. Momentum scans only flagged POET up 9.33% with no news, pointing to stock-specific factors rather than a broad sector move.

Common Catalyst Select peers are also promoting advanced power solutions (e.g., AOSL platform news), but price action appears company-specific rather than a synchronized AI power-semiconductor rally.

Previous AI Reports

5 past events · Latest: Mar 04 (Positive)

Same Type Pattern 5 events

Date	Event	Sentiment	Move	Catalyst
Mar 04	AI SST demo	Positive	+3.6%	250 kW solid-state transformer demo for 3.3 kV AC to 800 V DC conversion.
Feb 26	AI expo showcase	Positive	-3.7%	APEC 2026 exhibit of high-efficiency 800 VDC DC-DC and SiC solutions.
Feb 09	10 kW DC-DC launch	Positive	+4.1%	Launch of 10 kW 800 VDC DC‑DC platform with 98.5% peak efficiency.
Nov 20	GF foundry pact	Positive	-2.2%	Long-term U.S. GaN manufacturing partnership for AI and critical power.
Oct 13	NVIDIA AI support	Positive	+26.1%	New GaN and SiC portfolio supporting NVIDIA’s 800 VDC AI factory platform.

Pattern Detected

AI-focused announcements have generally produced modest, directionally mixed one-day reactions, with both sizable gains and small declines across similar AI power and partnership news.

Recent Company History

Recent history for Navitas centers on AI data-center and high‑power solutions. Prior AI-tag events include an 800 V DC solid-state transformer demo at 250 kW, multiple showcases of 10 kW 800 V→50 V platforms at up to 98.5% efficiency, and a U.S. GaN manufacturing partnership aimed at AI datacenters. A notable October 2025 update supporting NVIDIA’s 800 VDC AI factory drew a strong positive reaction, underscoring investor sensitivity to leading-edge AI power architectures.

Historical Comparison

+5.6% avg move · In the past AI-tagged releases, NVTS saw an average one-day move of 5.56%, with both strong rallies ...

AI

+5.6%

Average Historical Move AI

In the past AI-tagged releases, NVTS saw an average one-day move of 5.56%, with both strong rallies and modest declines around AI data-center power announcements.

AI-tag history shows a steady build from NVIDIA-aligned device launches and U.S. GaN manufacturing plans to 800 VDC SST demos and high-efficiency 10 kW DC-DC platforms, now extending into broader PCIM 2026 showcases for data-center and grid infrastructure.

Regulatory & Risk Context

Active S-3 Shelf · $250,000,000

Shelf Active

Active S-3 Shelf Registration 2026-05-11

$250,000,000 registered capacity

An effective Form S-3ASR shelf filed on May 11, 2026 allows Navitas to issue up to $250,000,000 in various securities via prospectus supplements. The company has already used this shelf for a $125.0 million at-the-market equity program, from which it has sold 6,529,666 shares for roughly $122.0 million in net proceeds, providing flexibility for additional capital raises.

Market Pulse Summary

The stock moved -7.7% in the session following this news. A negative reaction despite the product-fo...

Analysis

The stock moved -7.7% in the session following this news. A negative reaction despite the product-focused nature of this announcement would fit a mixed history where AI showcases have not always translated into immediate upside, even with solid technical milestones. With an effective $250,000,000 shelf and a recently utilized ATM program, investors have also been weighing capital-raising dynamics alongside the long-term AI and grid-infrastructure opportunity.

Key Terms

ganfast fets, sic, dc-dc, solid-state transformer, +4 more

8 terms

ganfast fets technical

"Product highlights include the latest in Navitas GaNFast FETs starting from 0.8 mOhms..."

GaNFast FETs are power transistors made from gallium nitride, a material that lets electronic switches turn on and off much faster and run cooler than traditional silicon parts. Think of them as smaller, quicker valves that control electrical flow more precisely, which matters to investors because they enable more efficient, compact and lower-heat power supplies for chargers, data centers, electric vehicles and other high-growth markets—potentially lowering cost, improving performance and driving demand for companies that make or use them.

sic technical

"GeneSiC™ silicon carbide (SiC) power semiconductors, will showcase its latest GaN and SiC products..."

Sic is a short notation placed immediately after a quoted word or passage to show the text is reproduced exactly as it appeared in the original source, even if it contains a typo, odd phrasing, or factual error. For investors, it signals that any mistake or unusual wording came from the original speaker or document, not from the publisher—like an editor saying “this is how it was said,” which helps with accuracy, responsibility, and legal clarity.

dc-dc technical

"10 kW 800 V-to-50 V DC-DC platform featuring 2.1 kW/in³ power density..."

A dc-dc is an electronic power converter that changes one direct-current voltage level to another, like a small transformer for batteries or electronic circuits. Investors care because these components determine how efficiently devices use power, affect product size and battery life, and can influence manufacturing costs and reliability—traits that impact a maker’s competitiveness and profit margins much like a car’s fuel efficiency affects its appeal and running costs.

solid-state transformer technical

"grid and energy infrastructure, Navitas will showcase two SST topologies..."

A solid-state transformer is an electrical device that performs the same job as a traditional transformer—changing voltage and isolating circuits—but does so with fast-switching electronics instead of large coils of wire and oil-filled tanks. It can be smaller, more efficient, provide finer control over how power is delivered or routed, and enable features like two-way power flow and built-in monitoring. For investors, that means companies making or deploying them could benefit from spending on grid upgrades, electric vehicle charging, renewable integration, and smarter infrastructure, similar to how upgrading from a mechanical gearbox to a digital controller unlocks new capabilities.

mosfets technical

"5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP."

A MOSFET is a tiny electronic switch used inside chips and power circuits to control the flow of electricity, functioning much like a faucet that opens and closes to let current move when needed. Investors care because MOSFETs directly affect how fast, efficient and small electronic devices and power systems can be, so supply, performance improvements or cost changes in MOSFETs can impact manufacturers’ margins, product competitiveness and capital spending.

gate drivers technical

"using Texas Instruments’ C2000 real-time microcontrollers and UCC218915-Q1 gate drivers."

Gate drivers are small electronic circuits that take a low-power control signal and force large power switches to turn on or off quickly and reliably, essentially acting as a translator and booster between a control circuit and a heavy-duty electrical switch. They matter to investors because they directly affect product efficiency, heat generation, reliability and manufacturing cost in markets like electric vehicles, renewable energy and data centers—factors that influence a company’s margins and competitiveness.

press-fit modules technical

"TAP SiC devices using advanced reliability SiCPAK press-fit modules..."

Press-fit modules are electronic components or connector blocks designed to be installed by pushing them into a circuit board or housing so they stay in place by tight mechanical contact rather than by soldering or screws. For investors, they matter because this mounting method can lower assembly time and costs, improve serviceability and reliability, and affect supply-chain flexibility and product repairability—think of them as snap-in parts on furniture that speed up building and fixing.

bi-directional active front end technical

"50KVA Bi-Directional Active Front End, DAB SST solution based on Navitas 3300 V..."

A bi-directional active front end is an electrical converter that lets energy flow both into and out of a device or battery while actively managing voltage and current to keep power clean and stable. For investors, it matters because this technology improves efficiency, enables grid services like charging/discharging and voltage support, and reduces equipment wear—akin to a smart two-way valve that controls flow while smoothing pressure so the system runs reliably and meets grid rules.

AI-generated analysis. Not financial advice.

Highlights include two SST solutions for converting the MV grid to 800V HV DC, a 10 kW, 800 V-to-50 V DC-DC full-brick platform, along with a 20 kW 800 V-to-6 V power delivery board for AI data center

TORRANCE, Calif., May 18, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will showcase its latest GaN and SiC products for AI data center, energy and grid infrastructure, and industrial electrification at PCIM 2026.

Product highlights include the latest in Navitas GaNFast FETs starting from 0.8 mOhms at 100 V to 11 mOhms at 650 V, along with expanded offerings across the GaNSafe^TM, GaNSlim^TM, and Bi-directional GaN IC product families.

Navitas will showcase 3300 V, 2300 V, and 1200 V Trench Assisted Planar (TAP) SiC devices using advanced reliability SiCPAK^TM press-fit modules, alongside recently announced 5th-generation GeneSiC TAP MOSFETs for AI-Data Center in QDPAK and TO247-LP.

For the AI data center, Navitas will exhibit two solutions that enable a swifter transition to the 800 V_DC standard using GaN:

• 20 kW 800 V-to-6 V power delivery board aiming 97.5% peak efficiency, eliminating the traditional 48V intermediate bus converter (IBC) stage while enhancing overall system efficiency, reliability, cost-effectiveness, and power density.
  
  
• 10 kW 800 V-to-50 V DC-DC platform featuring 2.1 kW/in³ power density and 98.5% peak efficiency, leveraging the latest 650 V and 100 V GaNFast FETs to deliver industry-leading efficiency, power density, and performance for 800 VDC and ±400 V power architectures.
  

For grid and energy infrastructure, Navitas will showcase two SST topologies enabled by Navitas GeneSiC UHV and HV technology:

• An EPFL-developed full SST cell integrating the primary converter stage, transformer, and secondary conversion stage using a novel single-stage topology, leveraging Navitas 3300 V and 1200 V SiC technology.
  
• 50KVA Bi-Directional Active Front End, DAB SST solution based on Navitas 3300 V SiCPAK MOSFET modules, using Texas Instruments’ C2000TM real-time microcontrollers and UCC218915-Q1 gate drivers.
  

Navitas will also showcase industrial electrification and motor control inverter solutions based on GaNSense™ Motor Drive ICs, integrating lossless current sensing, voltage sensing, and temperature protection for improved performance and robustness. In addition, GaNSlim power ICs will showcase simplified development of high-efficiency, high-power-density solutions with industry-leading integration for performance computing applications.

Navitas will also be presenting in the following panel discussions:

Tuesday, June 9th | 1:25 -2:25 PM CET 
Componeers Panel Session: Automotive, AI, Humanoid Robots – the future of GaN
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit

Wednesday, June 10 | 11:45 am – 12:45 pm CET
Power Electronics News Panel Session: The Evolution in Data Center Power Distribution
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit

Wednesday, June 10th | 2:30 – 3:30 PM CET
Bodo’s Panel Session: “Riding the SiC Wave Efficiently”
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Paul Wheeler, VP & GM, High Voltage SiC Business Unit

Thursday, June 11th | 11:45 AM – 12:45 PM (CET)
Bodo’s Panel Session: “What’s up, what’s next for GaN?”
Technology Stage, Hall 4, PCIM Expo & Conference
Presenter: Llew Vaughan-Edmunds, VP & GM, GaN Business Unit

Navitas booth is located in Hall 9, Booth #544 at NürnbergMesse from June 9–11. You can find more detailed information about what Navitas is showcasing at PCIM Europe 2026 at: https://navitassemi.com/event/PCIM-2026.

To set up meetings with a Navitas representative, write to info@navitassemi.com.

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader in gallium nitride (GaN) and IC integrated devices, and high-voltage silicon carbide (SiC) technology, driving innovation across AI data centers, energy and grid infrastructure, performance computing, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™  high-voltage SiC devices leverage patented trench-assisted planar technology to provide industry-leading voltage capability, efficiency, and reliability for medium-voltage grid and infrastructure applications. Navitas has over 300 patents issued or pending and is the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Navitas Semiconductor
Vipin Bothra
info@navitassemi.com

Navitas Investor Contacts
Leanne Sievers | Brett Perry
Shelton Group
sheltonir@sheltongroup.com

Cautionary Statement Regarding Forward-Looking Statements
This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements are attempts to predict or indicate future events or trends or similar statements that are not a reflection of historical fact. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions. Forward-looking statements are made based on estimates and forecasts of financial and performance metrics, projections of market opportunity and market share and current indications of customer interest, all of which are based on various assumptions, whether or not identified in this press release. All such statements are based on current expectations of the management of Navitas and are not predictions of actual future performance. Forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas and, forward-looking statements are subject to a number of uncertainties. Our businesses are subject to certain risks that could materially and adversely affect our respective business, financial condition, results of operations, or the value of our securities. For Navitas, these and other risk factors are discussed in the Risk Factors section of our most recent annual report on Form 10-K, as updated in the Risk Factors section of our most recent quarterly report on Form 10-Q, and in other documents we file with the SEC. If any of these risks, as discussed in more detail in our SEC reports, materialize or if our assumptions underlying forward-looking statements prove to be incorrect, actual results could differ materially from the results implied by these forward-looking statements.

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/43b40945-68ad-48a0-aed3-3d7682eabfd4 

FAQ

What will Navitas (NVTS) showcase for AI data center power at PCIM 2026?

Navitas will present 800 VDC GaN-based power platforms for AI data centers. According to Navitas, highlights include a 20 kW 800 V-to-6 V board targeting 97.5% peak efficiency and a 10 kW 800 V-to-50 V DC-DC platform with 2.1 kW/in³ density and 98.5% peak efficiency.

Which GaN and SiC products is Navitas (NVTS) highlighting at PCIM Europe 2026?

Navitas is highlighting GaNFast FETs, GaNSafe, GaNSlim, bi-directional GaN ICs, and high-voltage GeneSiC SiC devices. According to Navitas, offerings span 0.8 mOhms at 100 V to 11 mOhms at 650 V and 3300 V, 2300 V, and 1200 V SiC TAP devices in SiCPAK press-fit modules.

What grid and energy infrastructure solutions will Navitas (NVTS) show at PCIM 2026?

Navitas will show two solid-state transformer topologies for grid and energy infrastructure. According to Navitas, these include an EPFL-developed full SST cell using 3300 V and 1200 V SiC, and a 50 kVA bi-directional active front end DAB SST using 3300 V SiCPAK MOSFET modules and TI C2000 microcontrollers.

How is Navitas (NVTS) addressing industrial electrification at PCIM Europe 2026?

Navitas is focusing on motor control and high-efficiency power for industrial electrification. According to Navitas, GaNSense motor-drive ICs integrate lossless current and voltage sensing plus temperature protection, while GaNSlim power ICs simplify high-efficiency, high-power-density designs for performance computing and industrial applications.

When and where is Navitas (NVTS) exhibiting at PCIM Europe 2026?

Navitas will exhibit at PCIM Europe 2026 from June 9–11 in Nuremberg. According to Navitas, the company’s booth is in Hall 9, Booth 544 at NürnbergMesse, with full event and product details available on the Navitas website and via direct meeting requests.

Which panel sessions will Navitas (NVTS) executives join during PCIM 2026?

Navitas executives will join several PCIM 2026 technology panels on GaN, SiC, and data center power. According to Navitas, sessions run June 9–11 and feature Llew Vaughan-Edmunds and Paul Wheeler discussing automotive, AI, humanoid robots, data center power distribution, and efficient SiC deployment.