Navitas Powers Expanded Samsung Galaxy Smartphone Portfolio

Rhea-AI Summary

Navitas Semiconductor (Nasdaq: NVTS) announced expanded adoption of its GaNFast™ gallium nitride (GaN) power ICs by Samsung. Initially used in flagship Galaxy S22, S23, and S24 models, GaNFast ICs are now incorporated in mainstream Galaxy A series and the innovative Galaxy Z Fold6 and Z Flip6 smartphones.

GaN technology offers significant advantages over legacy silicon, including 20x faster operation, enabling chargers that are 3x more powerful and 3x faster, while being half the size and weight. The new 25W charger (EP-T2510) features energy-saving technology that reduces standby losses by 75% to only 5 mW. This aligns with Navitas' environmental initiatives, as each GaNFast IC saves 4 kg of CO2 compared to legacy silicon chips.

Positive

• Expanded adoption of GaNFast ICs by Samsung across multiple smartphone series
• GaN technology enables 3x more powerful and 3x faster charging in half the size and weight
• New 25W charger reduces standby losses by 75% to only 5 mW
• Each GaNFast IC saves 4 kg of CO2 compared to legacy silicon chips

Negative

• None.

Next-gen GaNFast™ gallium nitride power ICs now fast-charge Samsung’s Galaxy Series-A, Galaxy Z Fold6 and Galaxy Z Flip6 phones

TORRANCE, Calif., Aug. 05, 2024 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that Samsung had expanded adoption of Navitas’ GaNFast ICs from the original flagship Galaxy S22, S23 and S24 to the mainstream Galaxy A, and revolutionary Galaxy Z Fold6 and Galaxy Z Flip6 smartphones with enhanced Galaxy AI features.

GaN runs up to 20x faster than legacy silicon and enables chargers up to 3x more power and 3x faster charging in half size and weight. GaNFast power ICs enable high-frequency, high-efficiency power conversion, achieving up to a 50% shrink vs. prior designs.

The new 25W charger (EP-T2510) features new energy-saving technology to reduce standby losses by 75% to only 5 mW, which aligns with Navitas’ environmental advances, where every GaNFast IC saves 4 kg of CO₂ vs. legacy silicon chips.

“Since enabling the world’s first production GaN charger in 2018, Navitas has pioneered and leads the adoption of GaN to replace legacy silicon chips,” noted David Carroll, Sr. VP Worldwide Sales for Navitas. “Our production partnership with Samsung dates back to the Galaxy S22 Ultra, and today’s announcement reflects the dramatic expansion of GaN from niche, flagship designs to adoption in high-volume, mainstream phones.”

About Navitas

Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation founded in 2024. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile and consumer. Over 250 Navitas patents are issued or pending. Navitas has the industry’s first and only 20-year GaNFast warranty, and was the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Stephen Oliver, VP Corporate Marketing & Investor Relations
ir@navitassemi.com

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/4bd484b0-b0ea-4ea8-ba38-1babb3eb24ee

FAQ

What new Samsung smartphone models are using Navitas' GaNFast ICs?

Navitas' GaNFast ICs are now being used in Samsung's mainstream Galaxy A series, as well as the Galaxy Z Fold6 and Galaxy Z Flip6 smartphones, expanding from the original flagship Galaxy S22, S23, and S24 models.

How does GaN technology improve smartphone charging for NVTS?

GaN technology from Navitas (NVTS) runs up to 20x faster than legacy silicon, enabling chargers that are up to 3x more powerful and 3x faster while being half the size and weight.

What are the environmental benefits of Navitas' GaNFast ICs for NVTS?

Each GaNFast IC from Navitas (NVTS) saves 4 kg of CO2 compared to legacy silicon chips. Additionally, their new 25W charger reduces standby losses by 75% to only 5 mW, aligning with the company's environmental initiatives.

When did Navitas (NVTS) first partner with Samsung for GaN chargers?

Navitas' production partnership with Samsung dates back to the Galaxy S22 Ultra, which was the first implementation of their GaNFast ICs in Samsung's smartphone chargers.