Navitas Powers Xiaomi’s Next Generation GaN Charger
Navitas Semiconductor (Nasdaq: NVTS) announced that its GaNSense Control ICs will power Xiaomi's next-generation 90W GaN charger. The ultra-compact charger sets new industry standards, measuring just 34 × 45 × 34 mm and weighing only 65 grams - approximately half the size and a third the weight of typical GaN chargers.
The charger incorporates Navitas' NV9580 GaNSense Control power IC and NV9701 synchronous rectification controller IC, combining 4th generation GaN power with high-frequency control functionality. The technology delivers enhanced efficiency, reduced component count, and superior voltage breakdown protection up to 800V.
Navitas Semiconductor (Nasdaq: NVTS) ha annunciato che i suoi circuiti integrati GaNSense Control alimenteranno il caricabatterie GaN da 90W di nuova generazione di Xiaomi. Il caricabatterie ultra-compatto stabilisce nuovi standard nel settore, misurando appena 34 × 45 × 34 mm e pesando solo 65 grammi - circa la metà delle dimensioni e un terzo del peso rispetto ai caricabatterie GaN tradizionali.
Il caricabatterie integra il NV9580 GaNSense Control power IC e il NV9701 controller IC per raddrizzamento sincrono di Navitas, combinando la quarta generazione di potenza GaN con funzionalità di controllo ad alta frequenza. Questa tecnologia offre una maggiore efficienza, un numero ridotto di componenti e una protezione superiore contro le sovratensioni fino a 800V.
Navitas Semiconductor (Nasdaq: NVTS) anunció que sus circuitos integrados GaNSense Control impulsarán el cargador GaN de próxima generación de 90W de Xiaomi. El cargador ultracompacto establece nuevos estándares en la industria, con unas dimensiones de solo 34 × 45 × 34 mm y un peso de apenas 65 gramos, aproximadamente la mitad del tamaño y un tercio del peso de los cargadores GaN típicos.
El cargador incorpora el NV9580 GaNSense Control power IC y el NV9701 controlador IC de rectificación síncrona de Navitas, combinando la cuarta generación de potencia GaN con funcionalidad de control de alta frecuencia. Esta tecnología ofrece mayor eficiencia, menor cantidad de componentes y una protección superior contra sobretensiones de hasta 800V.
Navitas Semiconductor (나스닥: NVTS)는 자사의 GaNSense Control IC가 Xiaomi의 차세대 90W GaN 충전기에 탑재될 것이라고 발표했습니다. 이 초소형 충전기는 크기 34 × 45 × 34 mm, 무게 단 65그램으로 업계의 새로운 기준을 세웠으며, 일반적인 GaN 충전기 크기의 절반, 무게의 3분의 1에 불과합니다.
이 충전기에는 Navitas의 NV9580 GaNSense Control 전력 IC와 NV9701 동기 정류 컨트롤러 IC가 탑재되어 4세대 GaN 전력과 고주파 제어 기능을 결합했습니다. 이 기술은 향상된 효율성, 부품 수 감소, 최대 800V의 우수한 전압 내력 보호를 제공합니다.
Navitas Semiconductor (Nasdaq : NVTS) a annoncé que ses circuits intégrés GaNSense Control alimenteront le chargeur GaN 90W de nouvelle génération de Xiaomi. Ce chargeur ultra-compact établit de nouvelles normes dans l'industrie, mesurant seulement 34 × 45 × 34 mm et ne pesant que 65 grammes – environ la moitié de la taille et un tiers du poids des chargeurs GaN classiques.
Le chargeur intègre le NV9580 GaNSense Control power IC et le NV9701 contrôleur IC de redressement synchrone de Navitas, combinant la 4e génération de puissance GaN avec une fonctionnalité de contrôle haute fréquence. Cette technologie offre une meilleure efficacité, un nombre réduit de composants et une protection supérieure contre les surtensions jusqu'à 800V.
Navitas Semiconductor (Nasdaq: NVTS) gab bekannt, dass seine GaNSense Control ICs das nächste 90W GaN-Ladegerät von Xiaomi antreiben werden. Das ultrakompakte Ladegerät setzt neue Branchenstandards mit den Maßen von nur 34 × 45 × 34 mm und einem Gewicht von lediglich 65 Gramm – etwa halb so groß und ein Drittel so schwer wie herkömmliche GaN-Ladegeräte.
Das Ladegerät integriert den NV9580 GaNSense Control Power IC und den NV9701 synchronen Gleichrichter-Controller IC von Navitas und kombiniert die 4. Generation der GaN-Leistung mit Hochfrequenz-Steuerungsfunktionen. Die Technologie bietet verbesserte Effizienz, reduzierte Bauteilanzahl und einen überlegenen Spannungsdurchbruchsschutz bis zu 800V.
- Partnership with major tech company Xiaomi strengthens market position
- Product achieves significant size reduction (50%) and weight reduction (67%) compared to typical GaN chargers
- Advanced features like 800V voltage breakdown protection and integrated functionality reduce component count
- No specific revenue or market impact metrics provided
- Competitive landscape and pricing details not disclosed
Insights
Navitas strengthens its position in the GaN power market through strategic partnership with Xiaomi, advancing its competitive edge in fast-charger technology.
Navitas Semiconductor's partnership with Xiaomi represents a significant commercial win for its GaNSense Control IC technology. The implementation in Xiaomi's next-generation 90W GaN charger demonstrates the practical advantages of Navitas' GaN technology in creating ultra-compact, high-efficiency charging solutions. What's particularly noteworthy here is the exceptional power density achieved - Xiaomi's charger measures just 34 × 45 × 34 mm and weighs only 65 grams, approximately half the size and a third the weight of typical GaN chargers.
The technical implementation combines Navitas' NV9580 GaNSense Control power IC on the primary side with the NV9701 synchronous rectification controller IC on the secondary side. This integrated approach delivers substantial benefits: the system operates at higher frequencies to minimize physical dimensions, incorporates lossless current sensing, high-voltage start-up capabilities, and eliminates the need for VDD inductors. These features collectively reduce component count while improving system efficiency.
This partnership has strategic importance for Navitas in the competitive power semiconductor market. Xiaomi is a major global electronics manufacturer with significant market reach, providing Navitas valuable commercial validation of its 4th generation GaN technology. The reference to a "long-standing collaboration" suggests ongoing design wins and potential future implementations across Xiaomi's product ecosystem. For Navitas, which competes with both traditional silicon-based power solutions and other GaN manufacturers, this high-profile implementation strengthens its position as a technology leader in the fast-growing GaN power semiconductor segment.
GaNSense™ Control ICs drive Xiaomi’s 90W next-gen GaN charger, setting new standards for performance, size, and weight in ultra-portable fast charging.
TORRANCE, Calif., July 31, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that Xiaomi’s next-generation 90W GaN charger will be powered by Navitas’ GaNSense Control ICs.
As the world’s smallest 90 W charger, this ultra-compact, high-power-density form-factor measures just 34 × 45 × 34 mm and weighs only 65 grams—approximately half the size and a third the weight of typical GaN chargers."
The charger integrates Navitas’ NV9580 GaNSense Control power IC on the primary side and the NV9701 synchronous rectification controller IC on the secondary side. The GaNSense Control family combines 4th generation GaN power with high-frequency control functionality. It provides all the benefits of a monolithically integrated GaN power FET and GaN drive, plus a controller and protection features in a single surface-mount package for high-density, high-efficiency chargers, adapters, and auxiliary power designs.
GaNSense Control ICs deliver the highest-frequency operation to minimize system size and weight. Integrated features such as lossless current sensing, high-voltage start-up, and elimination of VDD inductor reduce component count and increase system efficiency. With transient voltage breakdown up to 800 V and no PCB hotspots, Navitas’ GaNSense Control ICs deliver best-in-class efficiency in the smallest form factor.
“The launch of Xiaomi's 90W GaN charger marks a new milestone in our long-standing collaboration with Xiaomi,” said Charles Zha, SVP and APAC GM of Navitas. “Combining the innovation of GaNSense Control ICs and Xiaomi’s leading system expertise, we have delivered a new benchmark for ultra-portable fast-chargers. Navitas will continue our partnership with Xiaomi to continue future innovations with our GaN technology.”
About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection, to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance, industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/781cf667-f789-40f8-917b-2c658c3a8894
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