VREMT Presents Navitas with ‘Outstanding Technical Collaboration Award’

Rhea-AI Summary

Navitas Semiconductor (Nasdaq: NVTS) has received the 'Outstanding Technical Collaboration Award' from VREMT Energy, a Geely subsidiary. The companies established a joint R&D Laboratory to advance EV power-system development using Navitas' GaNFast and GeneSiC semiconductor technologies.

Key achievements include the introduction of the industry's first automotive 'AEC-Plus' qualified SiC MOSFETs in HV-T2PaK package and automotive-grade GaNSafe ICs with AEC-Q100 and AEC-Q101 qualifications. These technologies enable improved efficiency, weight, and size for EV components, supporting major automotive OEMs including Volvo, ZEEKR, and SMART.

Positive

• Recognition from major industry player VREMT Energy through technical collaboration award
• Strategic R&D partnership with VREMT Energy for EV power-system development
• First-to-market with automotive 'AEC-Plus' qualified SiC MOSFETs
• Successfully achieved AEC-Q100 and AEC-Q101 qualifications for GaNSafe ICs
• Partnerships with major automotive OEMs including Volvo, ZEEKR, and SMART

Negative

• None.

Insights

Semiconductor Industry Analyst

Navitas' award from VREMT validates its advanced GaN and SiC semiconductor technology leadership in the competitive EV power systems market.

The recognition from VREMT Energy, a Geely subsidiary specializing in EV power systems, represents meaningful validation for Navitas' GaN and SiC power semiconductor technologies. This award highlights Navitas' strategic positioning in the high-growth EV supply chain, with specific connections to major automotive manufacturers including Volvo, ZEEKR, and SMART.

The joint R&D laboratory with VREMT creates a competitive advantage for Navitas, potentially accelerating technology adoption cycles and creating sticky customer relationships. The technical breakthrough mentioned for EV on-board chargers and DC-DC converters addresses the critical pain points for electric vehicles: charging speed, driving range, and system efficiency.

Particularly noteworthy is Navitas' recent introduction of industry-first automotive 'AEC-Plus' qualified SiC MOSFETs in HV-T2PaK packaging, which offers enhanced reliability for demanding automotive applications. The 6.45 mm creepage specification is technically significant, meeting IEC compliance for high-voltage applications. Additionally, the achievement of both AEC-Q100 and AEC-Q101 qualifications for their GaNSafe ICs in April 2025 represents a milestone that opens doors to broader automotive market penetration.

The proprietary GaNSafe 4th generation family, with integrated control, drive, sensing and protection features, demonstrates Navitas' focus on differentiated products with 350ns max latency short-circuit protection and 2kV ESD protection. This strategic focus on safety features is precisely aligned with automotive industry requirements, where reliability is paramount.

Navitas recognized for developing and delivering next-gen GaN and SiC technologies to support major automotive OEMs, including Volvo, ZEEKR, and SMART

TORRANCE, Calif., June 24, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, has been awarded the ‘Outstanding Technical Collaboration Award’ from VREMT Energy, a subsidiary of Geely, which specializes in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems.

VREMT and Navitas opened a joint R&D Laboratory to accelerate EV power-system developments using Navitas’ GaNFast power ICs and GeneSiC power MOSFETs, driving technical breakthroughs and facilitating the rapid deployment of high-voltage EV systems. GaN and SiC technologies enable improved efficiency, weight, and size, critical for EV on-board chargers (OBCs) and DC-DC converters to deliver faster charging, longer range, and greater system efficiency for electric vehicles.

Navitas recently introduced the industry’s first automotive ‘AEC-Plus’ qualified SiC MOSFETs in HV-T2PaK top-side cooled package, which offers a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. The latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2PaK top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications up to 1200V.

In April 2025, automotive grade GaNSafe™ ICs were introduced achieving AEC-Q100 and AEC-Q101 qualifications, showcasing GaN’s next inflection into the automotive market. The GaNSafe 4^th generation family integrates control, drive, sensing, and critical protection features, enabling unprecedented reliability and robustness in high-power applications. It is the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4 pins, allowing the package to be treated like a discrete GaN FET, requiring no V_CC pin.

“This award is a testament to Navitas’ technology leadership and commitment to the EV industry,” said Charles Zha, Navitas SVP and GM of APAC. “We are proud that partnering with VREMT — the leading global EV power solutions provider, our GaN and SiC solutions can empower ZEEKR, Volvo, and SMART and potentially more next-generation EV makers worldwide. Our unwavering commitment to ‘Electrify Our World’ will continue to drive innovation and collaboration as we lead the clean energy revolution in transportation and beyond.”

About Navitas
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, celebrating 10 years of power innovation, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include AI data centers, EV, solar, energy storage, home appliance / industrial, mobile, and consumer. Over 300 Navitas patents are issued or pending, with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.

Navitas Semiconductor, GaNFast, GaNSense, GeneSiC, and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names, and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

Contact Information
Llew Vaughan-Edmunds, Sr Director, Product Management & Marketing
info@navitassemi.com

A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/9e7df9c9-07f3-40f0-b77a-97f577e429e0

FAQ

What award did Navitas Semiconductor (NVTS) receive from VREMT Energy?

Navitas received the 'Outstanding Technical Collaboration Award' from VREMT Energy, recognizing their development of next-generation GaN and SiC technologies for automotive applications.

What are the key features of Navitas' new automotive GaNSafe ICs?

The GaNSafe 4th generation ICs feature short-circuit protection (350ns max latency), 2kV ESD protection, elimination of negative gate drive, and programmable slew rate control, achieving AEC-Q100 and AEC-Q101 qualifications.

Which major automotive manufacturers are working with Navitas Semiconductor?

Navitas is working with major automotive OEMs including Volvo, ZEEKR, and SMART, providing GaN and SiC power semiconductor solutions.

What are the benefits of Navitas' semiconductor technology for electric vehicles?

Navitas' GaN and SiC technologies enable improved efficiency, weight, and size in EV components like on-board chargers and DC-DC converters, resulting in faster charging, longer range, and greater system efficiency.

What specifications does Navitas' new SiC MOSFET offer?

The new SiC MOSFETs come in 650V and 1200V versions with an HV-T2PaK top-side cooled package, offering the industry's highest creepage of 6.45 mm for IEC-compliance up to 1200V applications.