Vishay Intertechnology Standard-Level 40 V MOSFETs Prevent False Triggering and Reduce Noise in Motor Control Circuits

Vishay (NYSE: VSH) introduced four 40 V TrenchFET Gen IV standard-level n-channel MOSFETs — SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP — in a 6.15 mm by 5.15 mm PowerPAK SO-8 single package.

Rhea-AI Summary

Vishay (NYSE: VSH) introduced four 40 V TrenchFET Gen IV standard-level n-channel MOSFETs — SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP — in a 6.15 mm by 5.15 mm PowerPAK SO-8 single package.

They feature Vth(min) > 2.5 V and Qgd/Qgs < 1 to help prevent false triggering and reduce gate noise in motor control circuits. Typical RDS(on) at 10 V ranges from 0.9 mΩ to 2.5 mΩ, with gate charge from 32.6 nC to 82 nC. The devices are 100% RG- and UIS-tested, RoHS-compliant, halogen-free, and suited for BLDC motors, power tools, drones, and automation systems. Samples and production quantities are available with a 13-week lead time.

Argus Jul 7 session 20 alerts

-8.62% close to close 1.1x rel. volume Open Argus

Details

News Market Reaction – VSH

-8.6% Trough in 2 hr 48 min

$7.04B Mkt Cap at Peak Alert

On Jul 7, the day this news came out, VSH closed 8.62% below the previous close. Argus tracked a trough of -8.6% from its starting point during tracking. Our momentum scanner recorded 20 alerts for this stock that day.

Data tracked by StockTitan Argus for the Jul 7 session.

Key Figures

Drain-source voltage: 40 V Package size: 6.15 mm x 5.15 mm Gate-source threshold: > 2.5 V +5 more

Drain-source voltage

40 V

TrenchFET Gen IV n-channel MOSFET ratings

Package size

6.15 mm x 5.15 mm

PowerPAK SO-8 single package footprint

Gate-source threshold

> 2.5 V

Minimum Vth to help prevent false triggering

Qgd / Qgs ratio

< 1

Optimized ratio to reduce gate-induced noise

On-resistance range

0.9 mΩ – 2.5 mΩ

Typical RDS(on) at 10 V across SIR5402DP–SIR5408DP

Gate charge range

32.6 nC – 82 nC

Typical total gate charge values

Gate-source voltage rating

± 20 V

VGS limits for all four MOSFETs

Lead time

13 weeks

Samples and production quantities availability

Historical Context

5 past events · Latest: Jul 06

5 events

1. Jul 06

   Convertible notes update

   24h Move

   +0.5%

   Notes became convertible at holders’ option for a defined quarter window.

2. Jul 02

   Sensor product launch

   24h Move

   -10.3%

   Launch of 34 PHE multi-turn position sensor with higher accuracy and lower cost.

3. Jun 30

   Thermistor product launch

   24h Move

   -4.4%

   New SMD polymer PTC thermistors for resettable overcurrent protection in low voltage circuits.

4. Jun 29

   Equity offering pricing

   24h Move

   -4.4%

   Pricing of 15,000,000-share common stock offering at $50 targeting $750M proceeds.

5. Jun 29

   Equity offering launch

   24h Move

   -4.4%

   Announcement of proposed $750M common stock offering with additional underwriter option.

24h Move is the share-price change in the day after each event; other market factors may also have contributed.

Key Terms

mosfet, gate-source threshold voltage, on-resistance

3 terms

mosfet technical

"40 V TrenchFET® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm"

A MOSFET is a tiny electronic switch used to control the flow of electricity in chips and circuits, functioning like a faucet that turns current on or off and adjusts how much passes through. Investors watch MOSFETs because their performance, cost and availability affect product power efficiency, manufacturing yields and supply chains for industries from consumer electronics to electric vehicles, which in turn can influence companies’ margins and growth prospects.

gate-source threshold voltage technical

"combine a high minimum gate-source threshold voltage of greater than 2.5 V"

Minimum voltage difference between a transistor’s gate and source terminals required to create a conducting channel and switch the device from off to on. Think of it like the minimum pressure needed to open a valve: lower or more tightly controlled threshold voltages affect a chip’s power use, switching speed, manufacturing yield and suitability for different products, so changes can influence a semiconductor maker’s performance and competitiveness.

on-resistance technical

"available with a range of typical on-resistance values from 0.9 mΩ to 2.5 mΩ"

On-resistance is the electrical resistance a switching device (like a transistor) presents when it is turned on and conducting current. Lower on-resistance means less energy lost as heat, higher efficiency and better performance for power electronics, which matters to investors because it influences product competitiveness, operating costs, device reliability and demand in markets for power management and electric systems.

AI-generated analysis. How Rhea-AI works. Not financial advice.

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Offered in the PowerPAK^® SO-8 Single Package, Devices Provide High
V_th(min) > 2.5 V and Q_gd / Q_gs Ratios < 1

MALVERN, Pa., July 07, 2026 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced four new 40 V TrenchFET^® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK^® SO-8 single package. Optimized for the noisy environments of motor control circuits, the Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP combine a high minimum gate-source threshold voltage of greater than 2.5 V with Q_gd / Q_gs ratios of less than 1.

The high minimum gate-source threshold voltage of the devices released today prevents false MOSFET triggering induced by the gate in motor control circuits, while their optimized Q_gd / Q_gs ratios reduce gate-induced voltage fluctuations and the impact of gate noise. Both characteristics make the devices ideal for providing synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems.

The meet the requirements of specific applications, the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available with a range of typical on-resistance values from 0.9 mΩ to 2.5 mΩ at 10 V, and gate charge values from 32.6 nC to 82 nC. The MOSFETs are 100 % R_G- and UIS-tested, RoHS-compliant, and halogen-free.

Device Specification Table:

Part #		SIR5402DP	SIR5404DP	SIR5406DP	SIR5408DP
VDS		40	40	40	40
VGS		± 20	± 20	± 20	± 20
RDS(on)	@ 10 V (Typ.)	0.9 mΩ	1.55 mΩ	1.9 mΩ	2.5 mΩ
	@ 10 V (Max.)	1.2 mΩ	1.85 mΩ	2.5 mΩ	3.2 mΩ
Qg		82	61.5	44	32.6
Qgs		26	20	14	10.5
Qgd		18	14.5	10.5	7.5
Qgd / Qgs ratio		0.69	0.73	0.75	0.71
Vth(min)		2.5	2.5	2.5	2.5
Package		PowerPAK® SO-8 single

Samples and production quantities of the new standard-level MOSFETs are available now, with a lead time of 13 weeks.

Vishay manufactures one of the world’s largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Serving customers worldwide, Vishay is The DNA of tech.^® Vishay Intertechnology, Inc. is a Fortune 1000 Company listed on the NYSE (VSH). More on Vishay at www.Vishay.com.

The DNA of tech^® is a registered trademark of Vishay Intertechnology, Inc.

Vishay on Facebook: http://www.facebook.com/VishayIntertechnology
Vishay Twitter feed: http://twitter.com/vishayindust

Links to product datasheets:
http://www.vishay.com/ppg?61684  (SIR5402DP)
http://www.vishay.com/ppg?61660  (SIR5404DP)
http://www.vishay.com/ppg?61690  (SIR5406DP)
http://www.vishay.com/ppg?61662  (SIR5408DP)

Link to product photo:
https://www.flickr.com/photos/vishay/albums/72177720334480391/

For more information please contact:
Vishay Intertechnology
Peter Henrici, +1 408 567-8400
peter.henrici@vishay.com
 or
Redpines
Bob Decker, +1 415 409-0233
bob.decker@redpinesgroup.com

FAQ

AI-generated questions and answers. How Rhea-AI works. Not financial advice.

What did Vishay (NYSE: VSH) announce on July 7, 2026 for motor control circuits?

Vishay announced four new 40 V TrenchFET Gen IV standard-level n-channel MOSFETs for noisy motor control environments. According to Vishay, these PowerPAK SO-8 devices target synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems.

How do Vishay’s new 40 V MOSFETs (VSH) help prevent false triggering in motor control designs?

The MOSFETs use a high minimum gate-source threshold voltage above 2.5 V to resist false triggering. According to Vishay, this higher Vth(min) helps block unwanted gate-induced turn-on in noisy motor control circuits, improving reliability in BLDC and power tool applications.

What are the key electrical specifications of Vishay’s SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP MOSFETs?

These 40 V MOSFETs feature typical RDS(on) from 0.9 mΩ to 2.5 mΩ at 10 V and gate charge from 32.6 nC to 82 nC. According to Vishay, each device maintains a Qgd/Qgs ratio below 1, helping reduce gate-induced voltage fluctuations and noise.

Which applications are targeted by Vishay’s new 40 V TrenchFET Gen IV MOSFETs (VSH)?

The devices are aimed at synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones, and automation systems. According to Vishay, their noise-resistant design and low RDS(on) suit demanding, high-efficiency motor control and industrial environments.

What package and testing qualifications do Vishay’s new standard-level 40 V MOSFETs offer?

All four MOSFETs come in the PowerPAK SO-8 single package measuring 6.15 mm by 5.15 mm. According to Vishay, they are 100% RG- and UIS-tested, RoHS-compliant, and halogen-free, supporting robust and environmentally conscious designs.

When are samples and production quantities of Vishay’s new 40 V MOSFETs (VSH) available?

Samples and production quantities of the SIR5402DP, SIR5404DP, SIR5406DP, and SIR5408DP are available immediately. According to Vishay, these standard-level MOSFETs currently have a lead time of approximately 13 weeks for orders.